Enhancement of tunnel magnetoresistance effect on junction with Co cluster layers in Coulomb blockade regime

Yoshiyuki Fukumoto; Hitoshi Kubota; Yasuo Ando; Terunobu Miyazaki

Enhancement of tunnel magnetoresistance effect on junction with Co cluster layers in Coulomb blockade regime

Yoshiyuki Fukumoto, Hitoshi Kubota, Yasuo Ando, Terunobu Miyazaki

ENG - Applied Physics

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Tunnel magnetoresistance (TMR) effect in ferromagnet/granular/ferromagnet (FM/GR/FM) tunnel junctions was studied, where GR = Al-O/Co/Al-O or Al-O/Co/Al-O/Co/Al-O. The magnetoresistance (MR) ratio and the resistance of the latter junction increased with decreasing bias voltage at low temperatures. These increases should be due to the cotunneling effect in the Coulomb blockade regime. In contrast, the MR ratio of the former junction exhibited a maximum of 14% near 40mV and decreased to 10% at 1 mV. The increase of resistance in the former junction at a lower voltage was smaller than that in the latter junction. The difference was discussed using a simple model.

Original language	English
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	38
Issue number	8 B
Publication status	Published - 1999 Aug 1

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Enhancement of tunnel magnetoresistance effect on junction with Co cluster layers in Coulomb blockade regime",

abstract = "Tunnel magnetoresistance (TMR) effect in ferromagnet/granular/ferromagnet (FM/GR/FM) tunnel junctions was studied, where GR = Al-O/Co/Al-O or Al-O/Co/Al-O/Co/Al-O. The magnetoresistance (MR) ratio and the resistance of the latter junction increased with decreasing bias voltage at low temperatures. These increases should be due to the cotunneling effect in the Coulomb blockade regime. In contrast, the MR ratio of the former junction exhibited a maximum of 14% near 40mV and decreased to 10% at 1 mV. The increase of resistance in the former junction at a lower voltage was smaller than that in the latter junction. The difference was discussed using a simple model.",

author = "Yoshiyuki Fukumoto and Hitoshi Kubota and Yasuo Ando and Terunobu Miyazaki",

year = "1999",

month = aug,

day = "1",

language = "English",

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publisher = "Japan Society of Applied Physics",

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TY - JOUR

T1 - Enhancement of tunnel magnetoresistance effect on junction with Co cluster layers in Coulomb blockade regime

AU - Fukumoto, Yoshiyuki

AU - Kubota, Hitoshi

AU - Ando, Yasuo

AU - Miyazaki, Terunobu

PY - 1999/8/1

Y1 - 1999/8/1

N2 - Tunnel magnetoresistance (TMR) effect in ferromagnet/granular/ferromagnet (FM/GR/FM) tunnel junctions was studied, where GR = Al-O/Co/Al-O or Al-O/Co/Al-O/Co/Al-O. The magnetoresistance (MR) ratio and the resistance of the latter junction increased with decreasing bias voltage at low temperatures. These increases should be due to the cotunneling effect in the Coulomb blockade regime. In contrast, the MR ratio of the former junction exhibited a maximum of 14% near 40mV and decreased to 10% at 1 mV. The increase of resistance in the former junction at a lower voltage was smaller than that in the latter junction. The difference was discussed using a simple model.

AB - Tunnel magnetoresistance (TMR) effect in ferromagnet/granular/ferromagnet (FM/GR/FM) tunnel junctions was studied, where GR = Al-O/Co/Al-O or Al-O/Co/Al-O/Co/Al-O. The magnetoresistance (MR) ratio and the resistance of the latter junction increased with decreasing bias voltage at low temperatures. These increases should be due to the cotunneling effect in the Coulomb blockade regime. In contrast, the MR ratio of the former junction exhibited a maximum of 14% near 40mV and decreased to 10% at 1 mV. The increase of resistance in the former junction at a lower voltage was smaller than that in the latter junction. The difference was discussed using a simple model.

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M3 - Article

AN - SCOPUS:0033175277

VL - 38

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 8 B

ER -