Enhancement of tunnel magnetoresistance effect on junction with Co cluster layers in Coulomb blockade regime

Yoshiyuki Fukumoto, Hitoshi Kubota, Yasuo Ando, Terunobu Miyazaki

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Tunnel magnetoresistance (TMR) effect in ferromagnet/granular/ferromagnet (FM/GR/FM) tunnel junctions was studied, where GR = Al-O/Co/Al-O or Al-O/Co/Al-O/Co/Al-O. The magnetoresistance (MR) ratio and the resistance of the latter junction increased with decreasing bias voltage at low temperatures. These increases should be due to the cotunneling effect in the Coulomb blockade regime. In contrast, the MR ratio of the former junction exhibited a maximum of 14% near 40mV and decreased to 10% at 1 mV. The increase of resistance in the former junction at a lower voltage was smaller than that in the latter junction. The difference was discussed using a simple model.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume38
Issue number8 B
Publication statusPublished - 1999 Aug 1

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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