TY - JOUR
T1 - Enhancement of transparency in epitaxially-grown p-type SnO films by surface-passivation treatment in a Na2S aqueous solution
AU - Uchida, Suguri
AU - Soma, Takuto
AU - Kitamura, Miho
AU - Kumigashira, Hiroshi
AU - Ohtomo, Akira
N1 - Funding Information:
This work was partly supported by MEXT Elements Strategy Initiative to Form Core Research Center (JPMXP0112101001) and JSPS KAKENHI (20K15169, 21H02026). This work was the result of using research equipment (Raman spectroscopy) shared in MEXT Project for promoting public utilization of advanced research infrastructure (Program for supporting the introduction of the new sharing system, JPMXS0420900521). The work at KEK-PF was conducted with the approval of the Program Advisory Committee (Proposals No. 2021G660, and No. 2021G683) at the Institute of Materials Structure Science, KEK, Japan.
Publisher Copyright:
© 2022 The Japan Society of Applied Physics.
PY - 2022/5
Y1 - 2022/5
N2 - We report on the epitaxial growth of (001)-oriented SnO films on yttria-stabilized zirconia (100) substrates by pulsed-laser deposition and the impact of surface-passivation treatment on the optical transparency. The films immersed in a Na2S aqueous solution exhibited average visible transmittance higher than that of the as-grown ones by 1/418% despite negligibly small variations in the crystalline structure, p-type conductivity, and composition. Based on these results, the enhanced visible transmittance can be attributed to the suppression of midgap states near the film surface. The extended treatment resulted in conversion to a SnS phase, demonstrating a facile anion-exchange reaction.
AB - We report on the epitaxial growth of (001)-oriented SnO films on yttria-stabilized zirconia (100) substrates by pulsed-laser deposition and the impact of surface-passivation treatment on the optical transparency. The films immersed in a Na2S aqueous solution exhibited average visible transmittance higher than that of the as-grown ones by 1/418% despite negligibly small variations in the crystalline structure, p-type conductivity, and composition. Based on these results, the enhanced visible transmittance can be attributed to the suppression of midgap states near the film surface. The extended treatment resulted in conversion to a SnS phase, demonstrating a facile anion-exchange reaction.
KW - Epitaxial films
KW - p-type semiconductor
KW - Pulsed-laser deposition
KW - Soft chemistry
KW - Transparent conductors
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U2 - 10.35848/1347-4065/ac56fa
DO - 10.35848/1347-4065/ac56fa
M3 - Article
AN - SCOPUS:85130548483
SN - 0021-4922
VL - 61
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
IS - 5
M1 - 050903
ER -