Enhancement of terahertz radiation by CW infrared laser excitation in a doubly interdigitated grating gates transistors

M. Meziani, T. Nishimura, H. Tsuda, T. Suemitsu, W. Knap, V. Popov, T. Otsuji

Research output: Contribution to journalArticlepeer-review

Abstract

We report on a broadband terahertz emission from a doubly interdigitated grating gates high electron mobility transistor. The observed emission was explained as due to the excitation of multi mode of plasmons: thermally excited incoherent modes and instability-driven coherent modes. The experiment was performed using Fourier spectrometer system coupled with high sensitive 4K Silicon bolometer under the vacuum. To enhance the efficiency, the device was subjected, from the backside, to a CW 1.5 μm laser beam. Dependence of the emission on the gate bias was observed and interpreted as due to the self-oscillation of the plasma waves.

Original languageEnglish
Article number012071
JournalJournal of Physics: Conference Series
Volume193
DOIs
Publication statusPublished - 2009

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Fingerprint

Dive into the research topics of 'Enhancement of terahertz radiation by CW infrared laser excitation in a doubly interdigitated grating gates transistors'. Together they form a unique fingerprint.

Cite this