Enhancement of light trapping in thin-film hydrogenated microcrystalline Si solar cells using back reflectors with self-ordered dimple pattern

Hitoshi Sai; Hiroyuki Fujiwara; Michio Kondo; Yoshiaki Kanamori

doi:10.1063/1.2993351

Enhancement of light trapping in thin-film hydrogenated microcrystalline Si solar cells using back reflectors with self-ordered dimple pattern

Hitoshi Sai, Hiroyuki Fujiwara, Michio Kondo, Yoshiaki Kanamori

ENG - Robotics

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123 Citations (Scopus)

Abstract

In this article, the light-trapping effect of textured back surface reflectors in thin-film Si solar cells is investigated. A unique substrate with a periodic dimple pattern has been developed by utilizing anodic oxidation of Al as a self-ordering process. n-i-p hydrogenated microcrystalline Si (μc-Si:H) cells fabricated on the Al substrate with a period of 0.9 μm show an improved infrared response compared to those fabricated on randomly textured substrates. A high short circuit current density of 24.3 mA/cm² has been achieved in a 1-μm-thick μc-Si:H cell by adopting the patterned Al substrate.

Original language	English
Article number	143501
Journal	Applied Physics Letters
Volume	93
Issue number	14
DOIs	https://doi.org/10.1063/1.2993351
Publication status	Published - 2008

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2993351

Cite this

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title = "Enhancement of light trapping in thin-film hydrogenated microcrystalline Si solar cells using back reflectors with self-ordered dimple pattern",

abstract = "In this article, the light-trapping effect of textured back surface reflectors in thin-film Si solar cells is investigated. A unique substrate with a periodic dimple pattern has been developed by utilizing anodic oxidation of Al as a self-ordering process. n-i-p hydrogenated microcrystalline Si (μc-Si:H) cells fabricated on the Al substrate with a period of 0.9 μm show an improved infrared response compared to those fabricated on randomly textured substrates. A high short circuit current density of 24.3 mA/cm2 has been achieved in a 1-μm-thick μc-Si:H cell by adopting the patterned Al substrate.",

author = "Hitoshi Sai and Hiroyuki Fujiwara and Michio Kondo and Yoshiaki Kanamori",

note = "Funding Information: The authors thank Dr. Koida and Dr. Turkevych of RCPVs in AIST for their help and advice in this work. This work was supported by New Energy and Industrial Technology Development Organization (NEDO) under Ministry of Economy, Trade and Industry (METI), Japan.",

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T1 - Enhancement of light trapping in thin-film hydrogenated microcrystalline Si solar cells using back reflectors with self-ordered dimple pattern

AU - Sai, Hitoshi

AU - Fujiwara, Hiroyuki

AU - Kondo, Michio

AU - Kanamori, Yoshiaki

N1 - Funding Information: The authors thank Dr. Koida and Dr. Turkevych of RCPVs in AIST for their help and advice in this work. This work was supported by New Energy and Industrial Technology Development Organization (NEDO) under Ministry of Economy, Trade and Industry (METI), Japan.

PY - 2008

Y1 - 2008

N2 - In this article, the light-trapping effect of textured back surface reflectors in thin-film Si solar cells is investigated. A unique substrate with a periodic dimple pattern has been developed by utilizing anodic oxidation of Al as a self-ordering process. n-i-p hydrogenated microcrystalline Si (μc-Si:H) cells fabricated on the Al substrate with a period of 0.9 μm show an improved infrared response compared to those fabricated on randomly textured substrates. A high short circuit current density of 24.3 mA/cm2 has been achieved in a 1-μm-thick μc-Si:H cell by adopting the patterned Al substrate.

AB - In this article, the light-trapping effect of textured back surface reflectors in thin-film Si solar cells is investigated. A unique substrate with a periodic dimple pattern has been developed by utilizing anodic oxidation of Al as a self-ordering process. n-i-p hydrogenated microcrystalline Si (μc-Si:H) cells fabricated on the Al substrate with a period of 0.9 μm show an improved infrared response compared to those fabricated on randomly textured substrates. A high short circuit current density of 24.3 mA/cm2 has been achieved in a 1-μm-thick μc-Si:H cell by adopting the patterned Al substrate.

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Enhancement of light trapping in thin-film hydrogenated microcrystalline Si solar cells using back reflectors with self-ordered dimple pattern

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