Enhancement of light transmittance for wafers bonded with thin Al films using atomic diffusion bonding and subsequent laser irradiation

M. Ichikawa, N. Eboshi, T. Kemmochi, M. Sano, T. Mukai, M. Uomoto, T. Shimatsu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Enhancement of light transmittance was examined for sapphire or synthetic quartz glass wafers bonded with thin Al films using atomic diffusion bonding (ADB). The results indicate that the thin Al film at the bonded interface diffuses into the wafer by subsequent laser irradiation, which enhances the light transmittance through the bonded interface.

Original languageEnglish
Title of host publicationProceedings of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages1
ISBN (Electronic)9784904743034
DOIs
Publication statusPublished - 2017 Jun 13
Event5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017 - Tokyo, Japan
Duration: 2017 May 162017 May 18

Publication series

NameProceedings of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017

Other

Other5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017
CountryJapan
CityTokyo
Period17/5/1617/5/18

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Industrial and Manufacturing Engineering
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films

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