Enhancement of lateral solid phase epitaxy over SiO2 using a densified and thinned amorphous Si layer

K. Kusukawa, M. Moniwa, M. Ohkura, E. Takeda

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)

Abstract

Formation of a thin-film silicon-on-insulator structure by lateral solid phase epitaxy of amorphous Si is described. Thinning of the amorphous Si layer after deposition and densification in an ultrahigh vacuum, prior to solid phase epitaxy, successfully enhances the lateral growth length. In addition, the crystallinity of thin silicon-on-insulator layers formed by this technique is found to be better than that achieved by the conventional method.

Original languageEnglish
Pages (from-to)560-562
Number of pages3
JournalApplied Physics Letters
Volume56
Issue number6
DOIs
Publication statusPublished - 1990
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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