Enhancement of lateral solid phase epitaxy over SiO2 using a densified and thinned amorphous Si layer

K. Kusukawa, M. Moniwa, M. Ohkura, E. Takeda

    Research output: Contribution to journalArticlepeer-review

    11 Citations (Scopus)

    Abstract

    Formation of a thin-film silicon-on-insulator structure by lateral solid phase epitaxy of amorphous Si is described. Thinning of the amorphous Si layer after deposition and densification in an ultrahigh vacuum, prior to solid phase epitaxy, successfully enhances the lateral growth length. In addition, the crystallinity of thin silicon-on-insulator layers formed by this technique is found to be better than that achieved by the conventional method.

    Original languageEnglish
    Pages (from-to)560-562
    Number of pages3
    JournalApplied Physics Letters
    Volume56
    Issue number6
    DOIs
    Publication statusPublished - 1990 Dec 1

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

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