Enhancement of exchange bias by ultra-thin Mn layer insertion at the interface of Mn-Ir/Co-Fe bilayers

M. Tsunoda; S. Yoshitaki; Y. Ashizawa; D. Y. Kim; C. Mitsumata; Migaku Takahashi

doi:10.1002/pssb.200777391

Enhancement of exchange bias by ultra-thin Mn layer insertion at the interface of Mn-Ir/Co-Fe bilayers

M. Tsunoda, S. Yoshitaki, Y. Ashizawa, D. Y. Kim, C. Mitsumata, Migaku Takahashi

ENG - Electronic Engineering

Research output: Contribution to journal › Article

14 Citations (Scopus)

Abstract

Effects of ultra-thin Mn, Ru, Pd, Ta, Gd, and Tb layer insertion at the interface on the exchange bias of Mn₇₅Ir₂₅ZCo ₇₀Fe₃₀ bilayers were investigated. Unidirectional anisotropy constant, J_K, of the bilayer was significantly enhanced from 0.46 erg/cm² to 0.84 erg/cm² with the insertion of 0.5-nm-thick Mn layer, while it was reduced with increasing the inserted layer thickness for the other materials. The value of 0.84 erg/cm² was not obtained in the variation of J^K with respect to the chemical composition of Mn-Ir layer in a range of Ir content of 0 - 40 at.%. The cause of the enhancement of ^JK with ultra-thin Mn insertion might be due to the modification of antiferromagnetic spin structure at the interface.

Original language	English
Pages (from-to)	4470-4473
Number of pages	4
Journal	Physica Status Solidi (B) Basic Research
Volume	244
Issue number	12
DOIs	https://doi.org/10.1002/pssb.200777391
Publication status	Published - 2007 Dec 1

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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title = "Enhancement of exchange bias by ultra-thin Mn layer insertion at the interface of Mn-Ir/Co-Fe bilayers",

abstract = "Effects of ultra-thin Mn, Ru, Pd, Ta, Gd, and Tb layer insertion at the interface on the exchange bias of Mn75Ir25ZCo 70Fe30 bilayers were investigated. Unidirectional anisotropy constant, JK, of the bilayer was significantly enhanced from 0.46 erg/cm2 to 0.84 erg/cm2 with the insertion of 0.5-nm-thick Mn layer, while it was reduced with increasing the inserted layer thickness for the other materials. The value of 0.84 erg/cm2 was not obtained in the variation of JK with respect to the chemical composition of Mn-Ir layer in a range of Ir content of 0 - 40 at.%. The cause of the enhancement of JK with ultra-thin Mn insertion might be due to the modification of antiferromagnetic spin structure at the interface.",

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T1 - Enhancement of exchange bias by ultra-thin Mn layer insertion at the interface of Mn-Ir/Co-Fe bilayers

AU - Tsunoda, M.

AU - Yoshitaki, S.

AU - Ashizawa, Y.

AU - Kim, D. Y.

AU - Mitsumata, C.

AU - Takahashi, Migaku

PY - 2007/12/1

Y1 - 2007/12/1

N2 - Effects of ultra-thin Mn, Ru, Pd, Ta, Gd, and Tb layer insertion at the interface on the exchange bias of Mn75Ir25ZCo 70Fe30 bilayers were investigated. Unidirectional anisotropy constant, JK, of the bilayer was significantly enhanced from 0.46 erg/cm2 to 0.84 erg/cm2 with the insertion of 0.5-nm-thick Mn layer, while it was reduced with increasing the inserted layer thickness for the other materials. The value of 0.84 erg/cm2 was not obtained in the variation of JK with respect to the chemical composition of Mn-Ir layer in a range of Ir content of 0 - 40 at.%. The cause of the enhancement of JK with ultra-thin Mn insertion might be due to the modification of antiferromagnetic spin structure at the interface.

AB - Effects of ultra-thin Mn, Ru, Pd, Ta, Gd, and Tb layer insertion at the interface on the exchange bias of Mn75Ir25ZCo 70Fe30 bilayers were investigated. Unidirectional anisotropy constant, JK, of the bilayer was significantly enhanced from 0.46 erg/cm2 to 0.84 erg/cm2 with the insertion of 0.5-nm-thick Mn layer, while it was reduced with increasing the inserted layer thickness for the other materials. The value of 0.84 erg/cm2 was not obtained in the variation of JK with respect to the chemical composition of Mn-Ir layer in a range of Ir content of 0 - 40 at.%. The cause of the enhancement of JK with ultra-thin Mn insertion might be due to the modification of antiferromagnetic spin structure at the interface.

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