Enhancement of Al thin wire fabrication by using electromigration in relation to the discharge resistance of the atoms

Yebo Lu, Hironori Tohmyoh, Masumi Saka, Hongliang Pan

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

The utilization of electromigration for enhancement of Al thin wire fabrication was investigated. The experimental sample was a passivated Al line with a square hole at the anode end, and wire fabrication was affected by both the thickness of the passivation layer and the side length of the hole. The optimum value of the passivation layer thickness was determined. Both the time to failure of the Al line and the length of formed wire increased with increasing thickness up to the optimum thickness. Wire fabrication was also enhanced by increasing the side length of the discharge hole.

Original languageEnglish
Pages (from-to)1219-1222
Number of pages4
JournalOptoelectronics and Advanced Materials, Rapid Communications
Volume5
Issue number11
Publication statusPublished - 2011

Keywords

  • Adhesion
  • Aluminum
  • Electromigration
  • Thin films

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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