Enhancement-mode AlGaN/GaN MIS-HEMTs with low threshold voltage hysteresis using damage-free neutral beam etched gate recess

Yen Ku Lin, Shuichi Noda, Ruey Bor Lee, Chia Ching Huang, Quang Ho Luc, Seiji Samukawa, Edward Yi Chang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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