Enhancement in tunnel magnetoresistance effect by inserting CoFeB to the tunneling barrier interface in Co2MnSi/MgO/CoFe magnetic tunnel junctions

S. Tsunegi; Y. Sakuraba; M. Oogane; Hiroshi Naganuma; K. Takanashi; Y. Ando

doi:10.1063/1.3156858

Enhancement in tunnel magnetoresistance effect by inserting CoFeB to the tunneling barrier interface in Co₂MnSi/MgO/CoFe magnetic tunnel junctions

S. Tsunegi, Y. Sakuraba, M. Oogane, Hiroshi Naganuma, K. Takanashi, Y. Ando

Research output: Contribution to journal › Article › peer-review

24 Citations (Scopus)

Abstract

Tunnel magnetoresistance (TMR) effect was investigated in Co ₂MnSi/CoFeB (0-2 nm) /MgO/CoFe magnetic tunnel junctions (MTJs). TMR ratio was enhanced by inserting a thin CoFeB layer at the Co₂MnSi/MgO interface. The MTJ with CoFeB thickness of 0.5 nm exhibited the highest TMR ratio. From the conductance-voltage measurements for the fabricated MTJs, we infer that the highly spin polarized electron created in Co₂MnSi can conserve the polarization through the 0.5-nm-thick CoFeB layer. Furthermore, by insertion of the thin CoFeB layer, the temperature dependence of the TMR ratio was improved because of the suppression of the fluctuation of the magnetic moment at the Co₂MnSi/MgO interface.

Original language	English
Article number	252503
Journal	Applied Physics Letters
Volume	94
Issue number	25
DOIs	https://doi.org/10.1063/1.3156858
Publication status	Published - 2009

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.3156858

Cite this

@article{f71e4348a213474c975eb79440b51b87,

title = "Enhancement in tunnel magnetoresistance effect by inserting CoFeB to the tunneling barrier interface in Co2MnSi/MgO/CoFe magnetic tunnel junctions",

abstract = "Tunnel magnetoresistance (TMR) effect was investigated in Co 2MnSi/CoFeB (0-2 nm) /MgO/CoFe magnetic tunnel junctions (MTJs). TMR ratio was enhanced by inserting a thin CoFeB layer at the Co2MnSi/MgO interface. The MTJ with CoFeB thickness of 0.5 nm exhibited the highest TMR ratio. From the conductance-voltage measurements for the fabricated MTJs, we infer that the highly spin polarized electron created in Co2MnSi can conserve the polarization through the 0.5-nm-thick CoFeB layer. Furthermore, by insertion of the thin CoFeB layer, the temperature dependence of the TMR ratio was improved because of the suppression of the fluctuation of the magnetic moment at the Co2MnSi/MgO interface.",

author = "S. Tsunegi and Y. Sakuraba and M. Oogane and Hiroshi Naganuma and K. Takanashi and Y. Ando",

note = "Funding Information: This study was supported by the “High-Performance Low-Power Consumption Spin Devices and Storage Systems” program under Research and Development for Next- Generation Information Technology by the Ministry of Education, Culture, Sports, Science and Technology of Japan (MEXT).",

year = "2009",

doi = "10.1063/1.3156858",

language = "English",

volume = "94",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "25",

}

TY - JOUR

T1 - Enhancement in tunnel magnetoresistance effect by inserting CoFeB to the tunneling barrier interface in Co2MnSi/MgO/CoFe magnetic tunnel junctions

AU - Tsunegi, S.

AU - Sakuraba, Y.

AU - Oogane, M.

AU - Naganuma, Hiroshi

AU - Takanashi, K.

AU - Ando, Y.

N1 - Funding Information: This study was supported by the “High-Performance Low-Power Consumption Spin Devices and Storage Systems” program under Research and Development for Next- Generation Information Technology by the Ministry of Education, Culture, Sports, Science and Technology of Japan (MEXT).

PY - 2009

Y1 - 2009

N2 - Tunnel magnetoresistance (TMR) effect was investigated in Co 2MnSi/CoFeB (0-2 nm) /MgO/CoFe magnetic tunnel junctions (MTJs). TMR ratio was enhanced by inserting a thin CoFeB layer at the Co2MnSi/MgO interface. The MTJ with CoFeB thickness of 0.5 nm exhibited the highest TMR ratio. From the conductance-voltage measurements for the fabricated MTJs, we infer that the highly spin polarized electron created in Co2MnSi can conserve the polarization through the 0.5-nm-thick CoFeB layer. Furthermore, by insertion of the thin CoFeB layer, the temperature dependence of the TMR ratio was improved because of the suppression of the fluctuation of the magnetic moment at the Co2MnSi/MgO interface.

AB - Tunnel magnetoresistance (TMR) effect was investigated in Co 2MnSi/CoFeB (0-2 nm) /MgO/CoFe magnetic tunnel junctions (MTJs). TMR ratio was enhanced by inserting a thin CoFeB layer at the Co2MnSi/MgO interface. The MTJ with CoFeB thickness of 0.5 nm exhibited the highest TMR ratio. From the conductance-voltage measurements for the fabricated MTJs, we infer that the highly spin polarized electron created in Co2MnSi can conserve the polarization through the 0.5-nm-thick CoFeB layer. Furthermore, by insertion of the thin CoFeB layer, the temperature dependence of the TMR ratio was improved because of the suppression of the fluctuation of the magnetic moment at the Co2MnSi/MgO interface.

UR - http://www.scopus.com/inward/record.url?scp=67649488070&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=67649488070&partnerID=8YFLogxK

U2 - 10.1063/1.3156858

DO - 10.1063/1.3156858

M3 - Article

AN - SCOPUS:67649488070

SN - 0003-6951

VL - 94

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 25

M1 - 252503

ER -

Enhancement in tunnel magnetoresistance effect by inserting CoFeB to the tunneling barrier interface in Co₂MnSi/MgO/CoFe magnetic tunnel junctions

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this