Enhancement in spin-dependent tunneling with Coulomb blockade

S. Takahashi; S. Maekawa

doi:10.1016/S0304-8853(98)01006-3

Enhancement in spin-dependent tunneling with Coulomb blockade

S. Takahashi, S. Maekawa

Materials Property Division

Research output: Contribution to journal › Conference article › peer-review

10 Citations (Scopus)

Abstract

We study theoretically the magnetoresistance (MR) in two types of magnetic nanostructure systems: single-electron transistors (SET) and insulating granular ferromagnets. In both systems the MR is enhanced at low temperatures and the enhanced MR is maintained up to higher voltages, due to higher-order processes of spin-dependent tunneling between electrodes or granules with strong Coulomb blockade. The temperature and bias-voltage dependence of the MR are in consistent with recent experiments made on the two systems.

Original language	English
Pages (from-to)	143-145
Number of pages	3
Journal	Journal of Magnetism and Magnetic Materials
Volume	198
DOIs	https://doi.org/10.1016/S0304-8853(98)01006-3
Publication status	Published - 1999 Jun 1
Event	Proceedings of the 1998 3rd International Symposium on Metallic Multilayers (MML-98) - Vancouver, BC, Can Duration: 1998 Jun 14 → 1998 Jun 19

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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title = "Enhancement in spin-dependent tunneling with Coulomb blockade",

abstract = "We study theoretically the magnetoresistance (MR) in two types of magnetic nanostructure systems: single-electron transistors (SET) and insulating granular ferromagnets. In both systems the MR is enhanced at low temperatures and the enhanced MR is maintained up to higher voltages, due to higher-order processes of spin-dependent tunneling between electrodes or granules with strong Coulomb blockade. The temperature and bias-voltage dependence of the MR are in consistent with recent experiments made on the two systems.",

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T1 - Enhancement in spin-dependent tunneling with Coulomb blockade

AU - Takahashi, S.

AU - Maekawa, S.

PY - 1999/6/1

Y1 - 1999/6/1

N2 - We study theoretically the magnetoresistance (MR) in two types of magnetic nanostructure systems: single-electron transistors (SET) and insulating granular ferromagnets. In both systems the MR is enhanced at low temperatures and the enhanced MR is maintained up to higher voltages, due to higher-order processes of spin-dependent tunneling between electrodes or granules with strong Coulomb blockade. The temperature and bias-voltage dependence of the MR are in consistent with recent experiments made on the two systems.

AB - We study theoretically the magnetoresistance (MR) in two types of magnetic nanostructure systems: single-electron transistors (SET) and insulating granular ferromagnets. In both systems the MR is enhanced at low temperatures and the enhanced MR is maintained up to higher voltages, due to higher-order processes of spin-dependent tunneling between electrodes or granules with strong Coulomb blockade. The temperature and bias-voltage dependence of the MR are in consistent with recent experiments made on the two systems.

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U2 - 10.1016/S0304-8853(98)01006-3

DO - 10.1016/S0304-8853(98)01006-3

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SP - 143

EP - 145

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

SN - 0304-8853

T2 - Proceedings of the 1998 3rd International Symposium on Metallic Multilayers (MML-98)

Y2 - 14 June 1998 through 19 June 1998

ER -