Abstract
We study theoretically the magnetoresistance (MR) in two types of magnetic nanostructure systems: single-electron transistors (SET) and insulating granular ferromagnets. In both systems the MR is enhanced at low temperatures and the enhanced MR is maintained up to higher voltages, due to higher-order processes of spin-dependent tunneling between electrodes or granules with strong Coulomb blockade. The temperature and bias-voltage dependence of the MR are in consistent with recent experiments made on the two systems.
Original language | English |
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Pages (from-to) | 143-145 |
Number of pages | 3 |
Journal | Journal of Magnetism and Magnetic Materials |
Volume | 198 |
DOIs | |
Publication status | Published - 1999 Jun 1 |
Event | Proceedings of the 1998 3rd International Symposium on Metallic Multilayers (MML-98) - Vancouver, BC, Can Duration: 1998 Jun 14 → 1998 Jun 19 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics