TY - JOUR
T1 - Enhancement in spin-dependent tunneling with Coulomb blockade
AU - Takahashi, S.
AU - Maekawa, S.
N1 - Funding Information:
We are grateful to S. Mitani, K. Takanashi, H. Fujimori, and P.M. Levy for fruitful discussions. This work is supported by a Grant-in-Aid for Scientific Research Priority Area for Ministry of Education, Science and Culture of Japan and the Grant from Japan Society for the Promotion of Science.
PY - 1999/6/1
Y1 - 1999/6/1
N2 - We study theoretically the magnetoresistance (MR) in two types of magnetic nanostructure systems: single-electron transistors (SET) and insulating granular ferromagnets. In both systems the MR is enhanced at low temperatures and the enhanced MR is maintained up to higher voltages, due to higher-order processes of spin-dependent tunneling between electrodes or granules with strong Coulomb blockade. The temperature and bias-voltage dependence of the MR are in consistent with recent experiments made on the two systems.
AB - We study theoretically the magnetoresistance (MR) in two types of magnetic nanostructure systems: single-electron transistors (SET) and insulating granular ferromagnets. In both systems the MR is enhanced at low temperatures and the enhanced MR is maintained up to higher voltages, due to higher-order processes of spin-dependent tunneling between electrodes or granules with strong Coulomb blockade. The temperature and bias-voltage dependence of the MR are in consistent with recent experiments made on the two systems.
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U2 - 10.1016/S0304-8853(98)01006-3
DO - 10.1016/S0304-8853(98)01006-3
M3 - Conference article
AN - SCOPUS:0032666563
VL - 198
SP - 143
EP - 145
JO - Journal of Magnetism and Magnetic Materials
JF - Journal of Magnetism and Magnetic Materials
SN - 0304-8853
T2 - Proceedings of the 1998 3rd International Symposium on Metallic Multilayers (MML-98)
Y2 - 14 June 1998 through 19 June 1998
ER -