Enhanced tunnel magnetoresistance due to spin dependent quantum well resonance in specific symmetry states of an ultrathin ferromagnetic electrode

Tomohiko Niizeki, Nobuki Tezuka, Koichiro Inomata

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36 Citations (Scopus)

Abstract

Spin dependent quantum well resonance has been investigated in fully epitaxial magnetic tunnel junctions with Fe(001)/MgO(001)/ultrathin Fe(001)/Cr(001) structure. The dI/dV spectra clearly show the resonant peaks which shift systematically depending on the thickness of an ultrathin electrode as predicted in ab initio calculation. The magnetotransport is strongly modulated at the same bias voltage as the resonant peaks. This control of the magnetotransport in magnetic tunnel junctions at a specific bias voltage will contribute to the development of active spintronic devices.

Original languageEnglish
Article number047207
JournalPhysical Review Letters
Volume100
Issue number4
DOIs
Publication statusPublished - 2008 Jan 31

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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