Enhanced tunnel magnetoresistance due to spin dependent quantum well resonance in specific symmetry states of an ultrathin ferromagnetic electrode

Tomohiko Niizeki; Nobuki Tezuka; Koichiro Inomata

doi:10.1103/PhysRevLett.100.047207

Enhanced tunnel magnetoresistance due to spin dependent quantum well resonance in specific symmetry states of an ultrathin ferromagnetic electrode

Tomohiko Niizeki, Nobuki Tezuka, Koichiro Inomata

ENG - Materials Science

Research output: Contribution to journal › Article › peer-review

36 Citations (Scopus)

Abstract

Spin dependent quantum well resonance has been investigated in fully epitaxial magnetic tunnel junctions with Fe(001)/MgO(001)/ultrathin Fe(001)/Cr(001) structure. The dI/dV spectra clearly show the resonant peaks which shift systematically depending on the thickness of an ultrathin electrode as predicted in ab initio calculation. The magnetotransport is strongly modulated at the same bias voltage as the resonant peaks. This control of the magnetotransport in magnetic tunnel junctions at a specific bias voltage will contribute to the development of active spintronic devices.

Original language	English
Article number	047207
Journal	Physical Review Letters
Volume	100
Issue number	4
DOIs	https://doi.org/10.1103/PhysRevLett.100.047207
Publication status	Published - 2008 Jan 31

ASJC Scopus subject areas

Physics and Astronomy(all)

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AB - Spin dependent quantum well resonance has been investigated in fully epitaxial magnetic tunnel junctions with Fe(001)/MgO(001)/ultrathin Fe(001)/Cr(001) structure. The dI/dV spectra clearly show the resonant peaks which shift systematically depending on the thickness of an ultrathin electrode as predicted in ab initio calculation. The magnetotransport is strongly modulated at the same bias voltage as the resonant peaks. This control of the magnetotransport in magnetic tunnel junctions at a specific bias voltage will contribute to the development of active spintronic devices.

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