Enhanced thermoelectric properties of chimney-ladder type higher manganese silicides

Yuzuru Miyazaki; Haruki Hamada; Yuta Kikuchi; Kei Hayashi

doi:10.2497/jjspm.64.461

Enhanced thermoelectric properties of chimney-ladder type higher manganese silicides

Yuzuru Miyazaki, Haruki Hamada, Yuta Kikuchi, Kei Hayashi

ENG - Applied Physics

Research output: Contribution to journal › Review article › peer-review

Abstract

To further enhance thermoelectric (TE) properties of higher manganese silicides (HMSs), the dissipation of layered precipitates of the MnSi phase as well as the optimization of the hole carrier concentration are critical. We have systematically studied electronic structure of partially substituted solid solutions of (Mn_1-xMx)Si_1.7 with M = transition metals and prepared bulk samples of such solid solutions by spark plasma sintering. A 2 at% substitution of manganese with vanadium is found to dissipate the MnSi-precipitates effectively, results in a substantial increase in electrical conductivity from 3 × 10⁴ S/m to approximately 5 × 10⁴ S/m at 800 K. The resulting TE power factor reaches 1.86 mW/K₂m at 710 K, 30% higher than that of V-free samples.

Original language	English
Pages (from-to)	461-466
Number of pages	6
Journal	Funtai Oyobi Fummatsu Yakin/Journal of the Japan Society of Powder and Powder Metallurgy
Volume	64
Issue number	8
DOIs	https://doi.org/10.2497/jjspm.64.461
Publication status	Published - 2017 Aug

Keywords

Chimney-ladder phase
Higher manganese silicide
Incommensurate composite crystal
Thermoelectric properties
Valence electron counts

ASJC Scopus subject areas

Mechanical Engineering
Industrial and Manufacturing Engineering
Metals and Alloys
Materials Chemistry

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title = "Enhanced thermoelectric properties of chimney-ladder type higher manganese silicides",

abstract = "To further enhance thermoelectric (TE) properties of higher manganese silicides (HMSs), the dissipation of layered precipitates of the MnSi phase as well as the optimization of the hole carrier concentration are critical. We have systematically studied electronic structure of partially substituted solid solutions of (Mn1-xMx)Si1.7 with M = transition metals and prepared bulk samples of such solid solutions by spark plasma sintering. A 2 at% substitution of manganese with vanadium is found to dissipate the MnSi-precipitates effectively, results in a substantial increase in electrical conductivity from 3 × 104 S/m to approximately 5 × 104 S/m at 800 K. The resulting TE power factor reaches 1.86 mW/K2m at 710 K, 30% higher than that of V-free samples.",

keywords = "Chimney-ladder phase, Higher manganese silicide, Incommensurate composite crystal, Thermoelectric properties, Valence electron counts",

author = "Yuzuru Miyazaki and Haruki Hamada and Yuta Kikuchi and Kei Hayashi",

year = "2017",

month = aug,

doi = "10.2497/jjspm.64.461",

language = "English",

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journal = "Funtai Oyobi Fummatsu Yakin/Journal of the Japan Society of Powder and Powder Metallurgy",

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TY - JOUR

T1 - Enhanced thermoelectric properties of chimney-ladder type higher manganese silicides

AU - Miyazaki, Yuzuru

AU - Hamada, Haruki

AU - Kikuchi, Yuta

AU - Hayashi, Kei

PY - 2017/8

Y1 - 2017/8

N2 - To further enhance thermoelectric (TE) properties of higher manganese silicides (HMSs), the dissipation of layered precipitates of the MnSi phase as well as the optimization of the hole carrier concentration are critical. We have systematically studied electronic structure of partially substituted solid solutions of (Mn1-xMx)Si1.7 with M = transition metals and prepared bulk samples of such solid solutions by spark plasma sintering. A 2 at% substitution of manganese with vanadium is found to dissipate the MnSi-precipitates effectively, results in a substantial increase in electrical conductivity from 3 × 104 S/m to approximately 5 × 104 S/m at 800 K. The resulting TE power factor reaches 1.86 mW/K2m at 710 K, 30% higher than that of V-free samples.

AB - To further enhance thermoelectric (TE) properties of higher manganese silicides (HMSs), the dissipation of layered precipitates of the MnSi phase as well as the optimization of the hole carrier concentration are critical. We have systematically studied electronic structure of partially substituted solid solutions of (Mn1-xMx)Si1.7 with M = transition metals and prepared bulk samples of such solid solutions by spark plasma sintering. A 2 at% substitution of manganese with vanadium is found to dissipate the MnSi-precipitates effectively, results in a substantial increase in electrical conductivity from 3 × 104 S/m to approximately 5 × 104 S/m at 800 K. The resulting TE power factor reaches 1.86 mW/K2m at 710 K, 30% higher than that of V-free samples.

KW - Chimney-ladder phase

KW - Higher manganese silicide

KW - Incommensurate composite crystal

KW - Thermoelectric properties

KW - Valence electron counts

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JO - Funtai Oyobi Fummatsu Yakin/Journal of the Japan Society of Powder and Powder Metallurgy

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