Enhanced spontaneous emission in microcavity optical devices

Hiroyuki Yokoyama, S. D. Brorson, Erich P. Ippen, K. Nishi, T. Anan

Research output: Contribution to conferencePaperpeer-review

1 Citation (Scopus)

Abstract

The effective mode densities normalized by the free-space effective mode density for a planar mirror waveguide and an optical wire that has a square cross section are reported. It is assumed that the light-emitting medium is located halfway between the two mirrors or at the center of the optical wire's cross section and that the electric dipoles are randomly oriented. If a semiconductor is the light-emitting medium, the spontaneous emission rate is obtained by a convolution of the mode density and the transition matrix element over a broad emission bandwidth. A table comparing approximate values of the spontaneous emission rate in both structures for a few different cavity sizes is given. It is found that an optical wire provides a much larger increase in spontaneous emission rate. Monolithic Fabry-Perot microcavities were fabricated by the epitaxial growth of both light-emitting GaAs/AlGaAs multiple quantum well (MQW) active layers and AlAs/AlGaAs multilayer reflectors on GaAs substrates and used to obtain experimental verification of the spontaneous emission rate change by a cavity. The decay of the spectrally integrated photoluminescence intensity for approximately 1018/cm3 initial carrier density is shown and discussed. Even though the change is by a factor of only approximately 2 for the present Fabry-Perot structure, the result shows that the spontaneous emission rate change will certainly play a role in the operation of recently developed surface-emitting semiconductor lasers.

Original languageEnglish
Pages136-137
Number of pages2
Publication statusPublished - 1990 Dec 1
Externally publishedYes
Event17th International Conference on Quantum Electronics - IQEC '90 - Anaheim, CA, USA
Duration: 1990 May 211990 May 25

Other

Other17th International Conference on Quantum Electronics - IQEC '90
CityAnaheim, CA, USA
Period90/5/2190/5/25

ASJC Scopus subject areas

  • Engineering(all)

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