Enhanced spontaneous emission from GaAs quantum wells in monolithic microcavities

H. Yokoyama; K. Nishi; T. Anan; H. Yamada; S. D. Brorson; E. P. Ippen

doi:10.1063/1.103771

Enhanced spontaneous emission from GaAs quantum wells in monolithic microcavities

H. Yokoyama, K. Nishi, T. Anan, H. Yamada, S. D. Brorson, E. P. Ippen

Research output: Contribution to journal › Article › peer-review

199 Citations (Scopus)

Abstract

Enhanced spontaneous emission has been observed with wavelength-sized monolithic Fabry-Perot cavities containing GaAs quantum wells. With an on-resonance cavity structure, the photoluminescence intensity increases in the cavity axis direction, and the spontaneous emission lifetime is experimentally found to decrease.

Original language	English
Pages (from-to)	2814-2816
Number of pages	3
Journal	Applied Physics Letters
Volume	57
Issue number	26
DOIs	https://doi.org/10.1063/1.103771
Publication status	Published - 1990
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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@article{41f35318b0664ecab460d1af6d5c5e50,

title = "Enhanced spontaneous emission from GaAs quantum wells in monolithic microcavities",

abstract = "Enhanced spontaneous emission has been observed with wavelength-sized monolithic Fabry-Perot cavities containing GaAs quantum wells. With an on-resonance cavity structure, the photoluminescence intensity increases in the cavity axis direction, and the spontaneous emission lifetime is experimentally found to decrease.",

author = "H. Yokoyama and K. Nishi and T. Anan and H. Yamada and Brorson, {S. D.} and Ippen, {E. P.}",

year = "1990",

doi = "10.1063/1.103771",

language = "English",

volume = "57",

pages = "2814--2816",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "26",

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T1 - Enhanced spontaneous emission from GaAs quantum wells in monolithic microcavities

AU - Yokoyama, H.

AU - Nishi, K.

AU - Anan, T.

AU - Yamada, H.

AU - Brorson, S. D.

AU - Ippen, E. P.

PY - 1990

Y1 - 1990

N2 - Enhanced spontaneous emission has been observed with wavelength-sized monolithic Fabry-Perot cavities containing GaAs quantum wells. With an on-resonance cavity structure, the photoluminescence intensity increases in the cavity axis direction, and the spontaneous emission lifetime is experimentally found to decrease.

AB - Enhanced spontaneous emission has been observed with wavelength-sized monolithic Fabry-Perot cavities containing GaAs quantum wells. With an on-resonance cavity structure, the photoluminescence intensity increases in the cavity axis direction, and the spontaneous emission lifetime is experimentally found to decrease.

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U2 - 10.1063/1.103771

DO - 10.1063/1.103771

M3 - Article

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EP - 2816

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 26

ER -

Enhanced spontaneous emission from GaAs quantum wells in monolithic microcavities

Abstract

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