Enhanced spin accumulation obtained by inserting low-resistance MgO interface in metallic lateral spin valves

Y. Fukuma, L. Wang, H. Idzuchi, Y. Otani

Research output: Contribution to journalArticle

44 Citations (Scopus)

Abstract

We have systematically investigated the interface contributions to the spin injection characteristics in permalloy/MgO/Ag lateral spin valves. The spin valve signal remarkably increases with MgO thickness and reaches a maximum when the interface resistance is about 100 fΩm2 for 1 nm thick MgO, which is two orders of magnitude lower than that of the typical tunnel junction. Our quantitative analysis based on the spin-dependent diffusion equation considering variable spin polarization in the MgO layer well describes the observed trend in the spin valve signals.

Original languageEnglish
Article number012507
JournalApplied Physics Letters
Volume97
Issue number1
DOIs
Publication statusPublished - 2010 Jul 5
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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