Abstract
We propose herein that amorphous oxide semiconductor (AOS) superlattices, which can be deposited on various substrate including glasses or plastics without any substrate heating, are appropriate for the realization of superlattice thermoelectric devices. As an example, thermoelectric properties of AOS superlattices composed of a-In-Zn-O (well) and a-In-Ga-Zn-O (barrier) layers, fabricated on SiO2 glass substrate by pulsed laser deposition at room temperature, were measured to clarify whether enhancement of Seebeck coefficient |S| occurs or not. The |S|2D value increases drastically with decreasing a-In-Zn-O thickness (dIZO) when the dIZO is < ̃5 nm, and reached 73 μV·K-1 (dIZO = 0.3 nm), which is ̃4 times larger than that of bulk |S|3D (19 μV·K-1), while it kept high electrical conductivity, clearly demonstrating that the quantum size effect can be utilized in AOS superlattices.
Original language | English |
---|---|
Pages (from-to) | 395-400 |
Number of pages | 6 |
Journal | Materials Research Society Symposium Proceedings |
Volume | 1044 |
Publication status | Published - 2008 Oct 9 |
Event | Thermoelectric Power Generation - Boston, MA, United States Duration: 2007 Nov 26 → 2007 Nov 29 |
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering