Enhanced quantum efficiency of solar cells with self-assembled Ge dots stacked in multilayer structure

Arnold Alguno, Noritaka Usami, Toru Ujihara, Kozo Fujiwara, Gen Sazaki, Kazuo Nakajima, Yasuhiro Shiraki

Research output: Contribution to journalArticlepeer-review

95 Citations (Scopus)

Abstract

The performance of solar cells with stacked self-assembled Ge dots in the intrinsic region of Si-based p-i-n diode was reported. The dots were grown epitaxially on p-type Si(100) substrate via the Stranski-Krastanov growth mode by gas-source molecular beam epitaxy. The results obtained showed that electron-hole pairs generated in Ge dots can be efficiently separated by the internal electric field, and can contribute to the photocurrent without considerable recombination in Ge dots or at Ge/Si interfaces.

Original languageEnglish
Pages (from-to)1258-1260
Number of pages3
JournalApplied Physics Letters
Volume83
Issue number6
DOIs
Publication statusPublished - 2003 Aug 11

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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