Enhanced optical absorption due to E+-related band transition in GaAs:N δ-doped superlattices

Shuhei Yagi; Shunsuke Noguchi; Yasuto Hijikata; Shigeyuki Kuboya; Kentaro Onabe; Yoshitaka Okada; Hiroyuki Yaguchi

doi:10.7567/APEX.7.102301

Enhanced optical absorption due to E₊-related band transition in GaAs:N δ-doped superlattices

Shuhei Yagi, Shunsuke Noguchi, Yasuto Hijikata, Shigeyuki Kuboya, Kentaro Onabe, Yoshitaka Okada, Hiroyuki Yaguchi

Materials Design Division

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

The photoabsorption characteristics of GaAs:N δ-doped superlattices (SLs) are investigated. Periodic insertion of N δ-doped layers into GaAs induces the formation of conduction subbands E₊ and E_-, and each conduction subband forms SL minibands with the GaAs conduction band between the δ-doped layers. In addition to an optical absorption related to the E_- band, an abrupt absorption edge originating from the electron transition between the valence band and an E₊-related miniband is observed at 1.6eV in a photoluminescence excitation (PLE) spectrum, indicating that GaAs:N δ-doped SLs are promising candidates for the absorber of intermediate-band solar cells.

Original language	English
Article number	102301
Journal	Applied Physics Express
Volume	7
Issue number	10
DOIs	https://doi.org/10.7567/APEX.7.102301
Publication status	Published - 2014 Oct 1

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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title = "Enhanced optical absorption due to E+-related band transition in GaAs:N δ-doped superlattices",

abstract = "The photoabsorption characteristics of GaAs:N δ-doped superlattices (SLs) are investigated. Periodic insertion of N δ-doped layers into GaAs induces the formation of conduction subbands E+ and E-, and each conduction subband forms SL minibands with the GaAs conduction band between the δ-doped layers. In addition to an optical absorption related to the E- band, an abrupt absorption edge originating from the electron transition between the valence band and an E+-related miniband is observed at 1.6eV in a photoluminescence excitation (PLE) spectrum, indicating that GaAs:N δ-doped SLs are promising candidates for the absorber of intermediate-band solar cells.",

author = "Shuhei Yagi and Shunsuke Noguchi and Yasuto Hijikata and Shigeyuki Kuboya and Kentaro Onabe and Yoshitaka Okada and Hiroyuki Yaguchi",

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T1 - Enhanced optical absorption due to E+-related band transition in GaAs:N δ-doped superlattices

AU - Yagi, Shuhei

AU - Noguchi, Shunsuke

AU - Hijikata, Yasuto

AU - Kuboya, Shigeyuki

AU - Onabe, Kentaro

AU - Okada, Yoshitaka

AU - Yaguchi, Hiroyuki

PY - 2014/10/1

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N2 - The photoabsorption characteristics of GaAs:N δ-doped superlattices (SLs) are investigated. Periodic insertion of N δ-doped layers into GaAs induces the formation of conduction subbands E+ and E-, and each conduction subband forms SL minibands with the GaAs conduction band between the δ-doped layers. In addition to an optical absorption related to the E- band, an abrupt absorption edge originating from the electron transition between the valence band and an E+-related miniband is observed at 1.6eV in a photoluminescence excitation (PLE) spectrum, indicating that GaAs:N δ-doped SLs are promising candidates for the absorber of intermediate-band solar cells.

AB - The photoabsorption characteristics of GaAs:N δ-doped superlattices (SLs) are investigated. Periodic insertion of N δ-doped layers into GaAs induces the formation of conduction subbands E+ and E-, and each conduction subband forms SL minibands with the GaAs conduction band between the δ-doped layers. In addition to an optical absorption related to the E- band, an abrupt absorption edge originating from the electron transition between the valence band and an E+-related miniband is observed at 1.6eV in a photoluminescence excitation (PLE) spectrum, indicating that GaAs:N δ-doped SLs are promising candidates for the absorber of intermediate-band solar cells.

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