TY - JOUR
T1 - Enhanced optical absorption due to E+-related band transition in GaAs:N δ-doped superlattices
AU - Yagi, Shuhei
AU - Noguchi, Shunsuke
AU - Hijikata, Yasuto
AU - Kuboya, Shigeyuki
AU - Onabe, Kentaro
AU - Okada, Yoshitaka
AU - Yaguchi, Hiroyuki
N1 - Publisher Copyright:
© 2014 The Japan Society of Applied Physics.
PY - 2014/10/1
Y1 - 2014/10/1
N2 - The photoabsorption characteristics of GaAs:N δ-doped superlattices (SLs) are investigated. Periodic insertion of N δ-doped layers into GaAs induces the formation of conduction subbands E+ and E-, and each conduction subband forms SL minibands with the GaAs conduction band between the δ-doped layers. In addition to an optical absorption related to the E- band, an abrupt absorption edge originating from the electron transition between the valence band and an E+-related miniband is observed at 1.6eV in a photoluminescence excitation (PLE) spectrum, indicating that GaAs:N δ-doped SLs are promising candidates for the absorber of intermediate-band solar cells.
AB - The photoabsorption characteristics of GaAs:N δ-doped superlattices (SLs) are investigated. Periodic insertion of N δ-doped layers into GaAs induces the formation of conduction subbands E+ and E-, and each conduction subband forms SL minibands with the GaAs conduction band between the δ-doped layers. In addition to an optical absorption related to the E- band, an abrupt absorption edge originating from the electron transition between the valence band and an E+-related miniband is observed at 1.6eV in a photoluminescence excitation (PLE) spectrum, indicating that GaAs:N δ-doped SLs are promising candidates for the absorber of intermediate-band solar cells.
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U2 - 10.7567/APEX.7.102301
DO - 10.7567/APEX.7.102301
M3 - Article
AN - SCOPUS:84988891884
VL - 7
JO - Applied Physics Express
JF - Applied Physics Express
SN - 1882-0778
IS - 10
M1 - 102301
ER -