Enhanced optical absorption due to E+-related band transition in GaAs:N δ-doped superlattices

Shuhei Yagi, Shunsuke Noguchi, Yasuto Hijikata, Shigeyuki Kuboya, Kentaro Onabe, Yoshitaka Okada, Hiroyuki Yaguchi

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

The photoabsorption characteristics of GaAs:N δ-doped superlattices (SLs) are investigated. Periodic insertion of N δ-doped layers into GaAs induces the formation of conduction subbands E+ and E-, and each conduction subband forms SL minibands with the GaAs conduction band between the δ-doped layers. In addition to an optical absorption related to the E- band, an abrupt absorption edge originating from the electron transition between the valence band and an E+-related miniband is observed at 1.6eV in a photoluminescence excitation (PLE) spectrum, indicating that GaAs:N δ-doped SLs are promising candidates for the absorber of intermediate-band solar cells.

Original languageEnglish
Article number102301
JournalApplied Physics Express
Volume7
Issue number10
DOIs
Publication statusPublished - 2014 Oct 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Enhanced optical absorption due to E<sub>+</sub>-related band transition in GaAs:N δ-doped superlattices'. Together they form a unique fingerprint.

  • Cite this

    Yagi, S., Noguchi, S., Hijikata, Y., Kuboya, S., Onabe, K., Okada, Y., & Yaguchi, H. (2014). Enhanced optical absorption due to E+-related band transition in GaAs:N δ-doped superlattices. Applied Physics Express, 7(10), [102301]. https://doi.org/10.7567/APEX.7.102301