Enhanced magnetoresistance due to charging effects in a molecular nanocomposite spin device

Daiki Hatanaka, Shinichi Tanabe, Haruka Kusai, Ryo Nouchi, Takayuki Nozaki, Teruya Shinjo, Yoshishige Suzuki, Hai Wang, Koki Takanashi, Masashi Shiraishi

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16 Citations (Scopus)

Abstract

We have investigated a Coulomb-blockade effect and a higher order cotunneling effect in rubrene-Co nanocomposite spin devices, where the Co nanoparticles were uniformly embedded into the rubrene matrix and a large magnetoresistance (MR) effect appeared. A clear Coulomb gap was observed between ±1.1 V at low temperature. Within the gap, the enhancement of the MR ratio was observed up to ∼50%, which has not been explained by previous theoretical studies. The enhancement is induced by higher-order cotunneling. Power-law dependence of an electric current for a bias voltage (I∼ V2N-1; N is an order of cotunneling) was observed in the Coulomb gap, which corroborates that at maximum fifth-order cotunneling is attributed to the enhancement of the MR ratio.

Original languageEnglish
Article number235402
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume79
Issue number23
DOIs
Publication statusPublished - 2009 Jun 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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    Hatanaka, D., Tanabe, S., Kusai, H., Nouchi, R., Nozaki, T., Shinjo, T., Suzuki, Y., Wang, H., Takanashi, K., & Shiraishi, M. (2009). Enhanced magnetoresistance due to charging effects in a molecular nanocomposite spin device. Physical Review B - Condensed Matter and Materials Physics, 79(23), [235402]. https://doi.org/10.1103/PhysRevB.79.235402