Enhanced logic performance with semiconducting bilayer graphene channels

Song Lin Li, Hisao Miyazaki, Hidefumi Hiura, Chuan Liu, Kazuhito Tsukagoshi

Research output: Contribution to journalArticlepeer-review

40 Citations (Scopus)

Abstract

Realization of logic circuits in graphene with an energy gap (EG) remains one of the main challenges for graphene electronics. We found that large transport EGs (>100 meV) can be fulfilled in dualgated bilayer graphene underneath a simple alumina passivation top gate stack, which directly contacts the graphene channels without an inserted buffer layer. With the presence of EGs, the electrical properties of the graphene transistors are significantly enhanced, as manifested by enhanced on/off current ratio, subthreshold slope, and current saturation. For the first time, complementary-like semiconducting logic graphene inverters are demonstrated that show a large improvement over their metallic counterparts. This result may open the way for logic applications of gap-engineered graphene.

Original languageEnglish
Pages (from-to)500-506
Number of pages7
JournalACS Nano
Volume5
Issue number1
DOIs
Publication statusPublished - 2011 Jan 25
Externally publishedYes

Keywords

  • Energy gap
  • Field-effect transistor
  • Graphene
  • Logic gate
  • Nanoelectronics

ASJC Scopus subject areas

  • Materials Science(all)
  • Engineering(all)
  • Physics and Astronomy(all)

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