Enhanced lateral grain growth and enlarged giant magnetoresistance in Co/Cu multilayer by Fe-Si buffer layer

Daisuke Takahashi, Satoshi Miura, Masakiyo Tsunoda, Migaku Takahashi

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

The giant magnetoresistance effect of Co/Cu multilayers fabricated on Fe-Si buffer layer was investigated as a function of the chemical composition of the buffer layer. Fe84Si16 buffer layer facilitates lateral grain growth of the Co/Cu multilayer and a large magnetoresistance ratio is obtained from it. No intermetallic compounds in Fe-Si system play any role in the enhancement of lateral grain growth of the multilayers.

Original languageEnglish
Pages (from-to)282-284
Number of pages3
JournalJournal of Magnetism and Magnetic Materials
Volume239
Issue number1-3
DOIs
Publication statusPublished - 2002 Feb 1

Keywords

  • Buffer layer
  • Giant magnetoresistance
  • Lateral grain growth
  • Multilayer

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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