Enhanced interface perpendicular magnetic anisotropy in Ta|CoFeB|MgO using nitrogen doped Ta underlayers

Jaivardhan Sinha, Masamitsu Hayashi, Andrew J. Kellock, Shunsuke Fukami, Michihiko Yamanouchi, Hideo Sato, Shoji Ikeda, Seiji Mitani, See Hun Yang, Stuart S.P. Parkin, Hideo Ohno

Research output: Contribution to journalArticlepeer-review

93 Citations (Scopus)

Abstract

We show that the magnetic characteristics of Ta|CoFeB|MgO magnetic heterostructures are strongly influenced by doping the Ta underlayer with nitrogen. In particular, the saturation magnetization drops upon doping the Ta underlayer, suggesting that the doped underlayer acts as a boron diffusion barrier. In addition, the thickness of the magnetic dead layer decreases with increasing nitrogen doping. Surprisingly, the interface magnetic anisotropy increases to ∼1.8 erg/cm2 when an optimum amount of nitrogen is introduced into the Ta underlayer. These results show that nitrogen doped Ta serves as a good underlayer for spintronic applications including magnetic tunnel junctions and domain wall devices.

Original languageEnglish
Article number242405
JournalApplied Physics Letters
Volume102
Issue number24
DOIs
Publication statusPublished - 2013 Jun 17

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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