Enhanced impurity incorporation by alternate Te and S doping in GaAs prepared by intermittent injection of triethylgallium and arsine in ultra high vacuum

Yutaka Oyama, Kenji Tezuka, Ken Suto, Jun Ichi Nishizawa

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

Enhanced incorporation of doped impurity in GaAs by alternate doping of Te and S is reported. When diethyltelluride (DETe) was injected on GaAs surface covered with S, the incorporation of Te was enhanced and it is shown that the Te concentration was increased according to the S coverage. Mechanism of enhanced impurity incorporation is discussed in view of the charge distribution in the molecules and the electronegativity difference.

Original languageEnglish
Pages (from-to)15-20
Number of pages6
JournalJournal of Crystal Growth
Volume246
Issue number1-2
DOIs
Publication statusPublished - 2002 Dec

Keywords

  • A1. Doping
  • A1. Impurities
  • A3. Atomic layer epitaxy
  • B1. Gallium compounds
  • B2. Semiconducting III-V materials
  • B2. Semiconducting gallium arsenide

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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