TY - JOUR
T1 - Enhanced impurity incorporation by alternate Te and S doping in GaAs prepared by intermittent injection of triethylgallium and arsine in ultra high vacuum
AU - Oyama, Yutaka
AU - Tezuka, Kenji
AU - Suto, Ken
AU - Nishizawa, Jun Ichi
N1 - Copyright:
Copyright 2008 Elsevier B.V., All rights reserved.
PY - 2002/12
Y1 - 2002/12
N2 - Enhanced incorporation of doped impurity in GaAs by alternate doping of Te and S is reported. When diethyltelluride (DETe) was injected on GaAs surface covered with S, the incorporation of Te was enhanced and it is shown that the Te concentration was increased according to the S coverage. Mechanism of enhanced impurity incorporation is discussed in view of the charge distribution in the molecules and the electronegativity difference.
AB - Enhanced incorporation of doped impurity in GaAs by alternate doping of Te and S is reported. When diethyltelluride (DETe) was injected on GaAs surface covered with S, the incorporation of Te was enhanced and it is shown that the Te concentration was increased according to the S coverage. Mechanism of enhanced impurity incorporation is discussed in view of the charge distribution in the molecules and the electronegativity difference.
KW - A1. Doping
KW - A1. Impurities
KW - A3. Atomic layer epitaxy
KW - B1. Gallium compounds
KW - B2. Semiconducting III-V materials
KW - B2. Semiconducting gallium arsenide
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U2 - 10.1016/S0022-0248(02)01784-0
DO - 10.1016/S0022-0248(02)01784-0
M3 - Article
AN - SCOPUS:0036888729
VL - 246
SP - 15
EP - 20
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 1-2
ER -