Enhanced growth rate for ammonothermal gallium nitride crystal growth using ammonium iodide mineralizer

D. Tomida, Y. Kagamitani, Q. Bao, K. Hazu, H. Sawayama, S. F. Chichibu, C. Yokoyama, T. Fukuda, T. Ishiguro

Research output: Contribution to journalArticlepeer-review

32 Citations (Scopus)

Abstract

High-temperature gallium nitride (GaN) crystal growth using the acidic ammonothermal method with ammonium iodide (NH 4I) as a mineralizer was investigated. The growth rate reached 105 μm/day, which was much higher than that previously achieved using acidic ammonothermal methods, and exceeded 100 μm/day, which is the minimum growth rate required for industrial applications. When NH 4I was used as a mineralizer, high-speed crystal growth was achieved at a relatively low pressure compared to the case of using an ammonium chloride (NH 4Cl) as a mineralizer.

Original languageEnglish
Pages (from-to)59-62
Number of pages4
JournalJournal of Crystal Growth
Volume353
Issue number1
DOIs
Publication statusPublished - 2012 Aug 15

Keywords

  • A2. Ammonothermal crystal growth
  • A2. Single crystal growth
  • B1. Gallium nitride
  • B2. Semiconducting gallium compounds

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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