Enhanced gate swing in InP HEMTs with high threshold voltage by means of InAlAsSb barrier

Tetsuya Suemitsu, Haruki Yokoyama, Hiroki Sugiyama, Masami Tokumitsu

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We demonstrated the suitability of the InP HEMTs with the InAlAsSb Schottky barrier to realize the high threshold voltage (enhancement mode), low gate current, and low power consumption. This quaternary compound material increases the conduction band discontinuity to the InGaAs channel by introducing only 10% of antimony to InAlAs. The gate current is reduced by an order of the magnitude (or even more) at gate voltage range from 0.4 to 0.8 V. On the other hand, the large conduction band discontinuity causes larger parasitic source and drain resistance, which decreases the extrinsic transconductance. Nevertheless, the high-frequency performance is comparable to the device with the conventional InAlAs barrier layer. Therefore, the InAlAsSb barrier is a promising option for logic applications, which requires reduced gate current.

Original languageEnglish
Pages (from-to)669-671
Number of pages3
JournalIEEE Electron Device Letters
Volume28
Issue number8
DOIs
Publication statusPublished - 2007 Aug 1

Keywords

  • FETs
  • Gate current
  • High frequency
  • High-electron mobility transistors (HEMTs)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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