Enhanced field ionization/desorption on branched silicon nanowires: Applications in gas ionization detection

R. Banan-Sadeghian, M. Saif Islam

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    1 Citation (Scopus)

    Abstract

    We demonstrate anomalous gaseous field ionization and field desorption on branching intrinsic silicon nanowires grown by a two-step VLS technique. Field ionization and desorption I-V curves of argon, nitrogen, helium, and ammonia, were recorded individually within a wide pressure range (10-7 to 10 Torr). Field ionization initiated at sub volt was followed by field desorption at about 7 - 38 V (applied field of ∼ 7×102 to 3.8×103 V/cm). Such voltages are three orders of magnitude smaller than the applied voltages required to generate field ionization on sharp metallic tips having the same tip curvature. The measured I-V curves were pressure dependent. Low voltage filed ionization and desorption phenomena were attributed to the combination effects of geometrical field enhancement on the apex of nanoscale silicon branches, field penetration, increased tunneling critical distance, band gap widening due to quantum confinement, and the surface states formed by the catalyst. The results presented herein suggest that gold terminated branching silicon nanowires could be strong candidates in building low power gas ionization sensors useful in highly selective detection of gases with low adsorption energies.

    Original languageEnglish
    Title of host publicationMicro- and Nanotechnology Sensors, Systems, and Applications II
    DOIs
    Publication statusPublished - 2010 Dec 1
    EventMicro- and Nanotechnology Sensors, Systems, and Applications II - Orlando, FL, United States
    Duration: 2010 Apr 52010 Apr 9

    Publication series

    NameProceedings of SPIE - The International Society for Optical Engineering
    Volume7679
    ISSN (Print)0277-786X

    Other

    OtherMicro- and Nanotechnology Sensors, Systems, and Applications II
    Country/TerritoryUnited States
    CityOrlando, FL
    Period10/4/510/4/9

    Keywords

    • branching silicon nanowires
    • field desorption
    • field ionization
    • gas ionization sensing

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics
    • Computer Science Applications
    • Applied Mathematics
    • Electrical and Electronic Engineering

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