Enhanced direct interband transitions in silicon nanowires studied by electron energy-loss spectroscopy

J. Kikkawa, S. Takeda, Y. Sato, M. Terauchi

Research output: Contribution to journalArticlepeer-review

14 Citations (Scopus)

Abstract

We have experimentally observed abnormally enhanced direct interband transitions in silicon nanowires covered with Si O2 layers by means of electron energy-loss spectroscopy (EELS). Core-diameter dependence of the EELS spectra was systematically studied. It was clarified that both E1 and E2 direct interband transitions of Si core are explicitly enhanced, owing to monopolar surface plasmons at a Si/Si O2 interface whenever core diameter is small. We also discuss the effects of thickness of the oxide layers on the direct interband transitions.

Original languageEnglish
Article number245317
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume75
Issue number24
DOIs
Publication statusPublished - 2007 Jun 18

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Enhanced direct interband transitions in silicon nanowires studied by electron energy-loss spectroscopy'. Together they form a unique fingerprint.

Cite this