We investigate the collimation factor of narrow channels defined by focused-ion-beam insulation writing in the highly mobile two-dimensional electron gas of an AlGaAs/GaAs heterostructure. We show that the degree of collimation can be enhanced by appropriate channel design. Additional boundary roughness caused by selective implantation of ions along the channel boundary considerably increases the collimation.
ASJC Scopus subject areas
- Physics and Astronomy(all)