Enhanced collimation in narrow channels fabricated by focused-ion-beam implantation

T. Bever; Y. Hirayama; S. Tarucha

doi:10.1063/1.356245

Enhanced collimation in narrow channels fabricated by focused-ion-beam implantation

T. Bever, Y. Hirayama, S. Tarucha

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

We investigate the collimation factor of narrow channels defined by focused-ion-beam insulation writing in the highly mobile two-dimensional electron gas of an AlGaAs/GaAs heterostructure. We show that the degree of collimation can be enhanced by appropriate channel design. Additional boundary roughness caused by selective implantation of ions along the channel boundary considerably increases the collimation.

Original language	English
Pages (from-to)	2477-2480
Number of pages	4
Journal	Journal of Applied Physics
Volume	75
Issue number	5
DOIs	https://doi.org/10.1063/1.356245
Publication status	Published - 1994
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1063/1.356245

Cite this

@article{c5cce29c40744cfea7ec84c04fef9d1d,

title = "Enhanced collimation in narrow channels fabricated by focused-ion-beam implantation",

abstract = "We investigate the collimation factor of narrow channels defined by focused-ion-beam insulation writing in the highly mobile two-dimensional electron gas of an AlGaAs/GaAs heterostructure. We show that the degree of collimation can be enhanced by appropriate channel design. Additional boundary roughness caused by selective implantation of ions along the channel boundary considerably increases the collimation.",

author = "T. Bever and Y. Hirayama and S. Tarucha",

year = "1994",

doi = "10.1063/1.356245",

language = "English",

volume = "75",

pages = "2477--2480",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "5",

}

TY - JOUR

T1 - Enhanced collimation in narrow channels fabricated by focused-ion-beam implantation

AU - Bever, T.

AU - Hirayama, Y.

AU - Tarucha, S.

PY - 1994

Y1 - 1994

N2 - We investigate the collimation factor of narrow channels defined by focused-ion-beam insulation writing in the highly mobile two-dimensional electron gas of an AlGaAs/GaAs heterostructure. We show that the degree of collimation can be enhanced by appropriate channel design. Additional boundary roughness caused by selective implantation of ions along the channel boundary considerably increases the collimation.

AB - We investigate the collimation factor of narrow channels defined by focused-ion-beam insulation writing in the highly mobile two-dimensional electron gas of an AlGaAs/GaAs heterostructure. We show that the degree of collimation can be enhanced by appropriate channel design. Additional boundary roughness caused by selective implantation of ions along the channel boundary considerably increases the collimation.

UR - http://www.scopus.com/inward/record.url?scp=0344317287&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0344317287&partnerID=8YFLogxK

U2 - 10.1063/1.356245

DO - 10.1063/1.356245

M3 - Article

AN - SCOPUS:0344317287

VL - 75

SP - 2477

EP - 2480

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 5

ER -

Enhanced collimation in narrow channels fabricated by focused-ion-beam implantation

Abstract

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