TY - GEN
T1 - Enhanced breakdown voltage for all-SiC modules
AU - Hori, Motohito
AU - Hinata, Yuichiro
AU - Taniguchi, Katsumi
AU - Ikeda, Yoshinari
AU - Takahashi, Yoshikazu
PY - 2017/12/26
Y1 - 2017/12/26
N2 - SiC devices are expected to be used in high voltage fields that require a breakdown voltage from 3 to 10kV such as railways, as well as the automotive that require high reliability such as hybrid vehicles and electric vehicles. This paper presents the packaging technologies of enhanced breakdown voltage for All-SiC modules.
AB - SiC devices are expected to be used in high voltage fields that require a breakdown voltage from 3 to 10kV such as railways, as well as the automotive that require high reliability such as hybrid vehicles and electric vehicles. This paper presents the packaging technologies of enhanced breakdown voltage for All-SiC modules.
KW - All-SiC
KW - Breakdown voltage
KW - Resin molding
UR - http://www.scopus.com/inward/record.url?scp=85049228388&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85049228388&partnerID=8YFLogxK
U2 - 10.1109/ICSJ.2017.8240105
DO - 10.1109/ICSJ.2017.8240105
M3 - Conference contribution
AN - SCOPUS:85049228388
T3 - 2017 IEEE CPMT Symposium Japan, ICSJ 2017
SP - 127
EP - 130
BT - 2017 IEEE CPMT Symposium Japan, ICSJ 2017
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2017 IEEE CPMT Symposium Japan, ICSJ 2017
Y2 - 20 November 2017 through 22 November 2017
ER -