Enhanced breakdown voltage for all-SiC modules

Motohito Hori, Yuichiro Hinata, Katsumi Taniguchi, Yoshinari Ikeda, Yoshikazu Takahashi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

SiC devices are expected to be used in high voltage fields that require a breakdown voltage from 3 to 10kV such as railways, as well as the automotive that require high reliability such as hybrid vehicles and electric vehicles. This paper presents the packaging technologies of enhanced breakdown voltage for All-SiC modules.

Original languageEnglish
Title of host publication2017 IEEE CPMT Symposium Japan, ICSJ 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages127-130
Number of pages4
ISBN (Electronic)9781538627129
DOIs
Publication statusPublished - 2017 Dec 26
Externally publishedYes
Event2017 IEEE CPMT Symposium Japan, ICSJ 2017 - Kyoto, Japan
Duration: 2017 Nov 202017 Nov 22

Publication series

Name2017 IEEE CPMT Symposium Japan, ICSJ 2017
Volume2017-January

Other

Other2017 IEEE CPMT Symposium Japan, ICSJ 2017
CountryJapan
CityKyoto
Period17/11/2017/11/22

Keywords

  • All-SiC
  • Breakdown voltage
  • Resin molding

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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  • Cite this

    Hori, M., Hinata, Y., Taniguchi, K., Ikeda, Y., & Takahashi, Y. (2017). Enhanced breakdown voltage for all-SiC modules. In 2017 IEEE CPMT Symposium Japan, ICSJ 2017 (pp. 127-130). (2017 IEEE CPMT Symposium Japan, ICSJ 2017; Vol. 2017-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICSJ.2017.8240105