Enhanced breakdown voltage for all-SiC modules

Motohito Hori; Yuichiro Hinata; Katsumi Taniguchi; Yoshinari Ikeda; Yoshikazu Takahashi

doi:10.1109/ICSJ.2017.8240105

Enhanced breakdown voltage for all-SiC modules

Motohito Hori, Yuichiro Hinata, Katsumi Taniguchi, Yoshinari Ikeda, Yoshikazu Takahashi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

5 Citations (Scopus)

Abstract

SiC devices are expected to be used in high voltage fields that require a breakdown voltage from 3 to 10kV such as railways, as well as the automotive that require high reliability such as hybrid vehicles and electric vehicles. This paper presents the packaging technologies of enhanced breakdown voltage for All-SiC modules.

Original language	English
Title of host publication	2017 IEEE CPMT Symposium Japan, ICSJ 2017
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	127-130
Number of pages	4
ISBN (Electronic)	9781538627129
DOIs	https://doi.org/10.1109/ICSJ.2017.8240105
Publication status	Published - 2017 Dec 26
Externally published	Yes
Event	2017 IEEE CPMT Symposium Japan, ICSJ 2017 - Kyoto, Japan Duration: 2017 Nov 20 → 2017 Nov 22

Publication series

Name	2017 IEEE CPMT Symposium Japan, ICSJ 2017
Volume	2017-January

Other

Other	2017 IEEE CPMT Symposium Japan, ICSJ 2017
Country	Japan
City	Kyoto
Period	17/11/20 → 17/11/22

Keywords

All-SiC
Breakdown voltage
Resin molding

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/ICSJ.2017.8240105

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Cite this

Hori, M., Hinata, Y., Taniguchi, K., Ikeda, Y., & Takahashi, Y. (2017). Enhanced breakdown voltage for all-SiC modules. In 2017 IEEE CPMT Symposium Japan, ICSJ 2017 (pp. 127-130). (2017 IEEE CPMT Symposium Japan, ICSJ 2017; Vol. 2017-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICSJ.2017.8240105

Enhanced breakdown voltage for all-SiC modules. / Hori, Motohito; Hinata, Yuichiro; Taniguchi, Katsumi; Ikeda, Yoshinari; Takahashi, Yoshikazu.

2017 IEEE CPMT Symposium Japan, ICSJ 2017. Institute of Electrical and Electronics Engineers Inc., 2017. p. 127-130 (2017 IEEE CPMT Symposium Japan, ICSJ 2017; Vol. 2017-January).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Hori, M, Hinata, Y, Taniguchi, K, Ikeda, Y & Takahashi, Y 2017, Enhanced breakdown voltage for all-SiC modules. in 2017 IEEE CPMT Symposium Japan, ICSJ 2017. 2017 IEEE CPMT Symposium Japan, ICSJ 2017, vol. 2017-January, Institute of Electrical and Electronics Engineers Inc., pp. 127-130, 2017 IEEE CPMT Symposium Japan, ICSJ 2017, Kyoto, Japan, 17/11/20. https://doi.org/10.1109/ICSJ.2017.8240105

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