Engineering magnetism in semiconductors

Tomasz Dietl, Hideo Ohno

Research output: Contribution to journalArticlepeer-review

69 Citations (Scopus)

Abstract

Transition metal doped III-V, II-VI, and group IV compounds offer an unprecedented opportunity to explore ferromagnetism in semiconductors. Because ferromagnetic spin-spin interactions are mediated by holes in the valence band, changing the Fermi level using co-doping, electric fields, or light can directly manipulate the magnetic ordering. Moreover, engineering the Fermi level position by co-doping makes it possible to modify solubility and self-compensation limits, affecting magnetic characteristics in a number of surprising ways. The Fermi energy can even control the aggregation of magnetic ions, providing a new route to self-organization of magnetic nanostructures in a semiconductor host.

Original languageEnglish
Pages (from-to)18-26
Number of pages9
JournalMaterials Today
Volume9
Issue number11
DOIs
Publication statusPublished - 2006 Nov

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'Engineering magnetism in semiconductors'. Together they form a unique fingerprint.

Cite this