Energy transport simulation with quasi three-dimensional temperature analysis for SOI-MOSFET

Hiroyuki Kiba, Hiroyuki Kurino, Takeshi Hashimoto, Hiroki Mori, Ken Yamaguchi, Mitumasa Koyanagi

Research output: Contribution to conferencePaper

Abstract

A new device simulator with energy transport analysis and quasi three-dimensional temperature analysis has been developed for evaluating the temperature rise in short channel SOI-MOSFET. A self-heating becomes a serious problem in short channel SOI-MOSFET owing to a small thermal conductivity of the buried oxide layer when the channel current is increased. We could accurately simulate various effects caused by the temperature rise such as the negative output resistance behaviour, the influence of the design rule on the temperature rise and the increase of the breakdown voltage due to the increased device temperature.

Original languageEnglish
Pages64-66
Number of pages3
DOIs
Publication statusPublished - 1992 Jan 1
EventExtended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 - Tsukuba, Jpn
Duration: 1992 Aug 261992 Aug 28

Other

OtherExtended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92
CityTsukuba, Jpn
Period92/8/2692/8/28

ASJC Scopus subject areas

  • Engineering(all)

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    Kiba, H., Kurino, H., Hashimoto, T., Mori, H., Yamaguchi, K., & Koyanagi, M. (1992). Energy transport simulation with quasi three-dimensional temperature analysis for SOI-MOSFET. 64-66. Paper presented at Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92, Tsukuba, Jpn, . https://doi.org/10.7567/ssdm.1992.b-2-3