A new device simulator with energy transport analysis and quasi three-dimensional temperature analysis has been developed for evaluating the temperature rise in short channel SOI-MOSFET. A self-heating becomes a serious problem in short channel SOI-MOSFET owing to a small thermal conductivity of the buried oxide layer when the channel current is increased. We could accurately simulate various effects caused by the temperature rise such as the negative output resistance behaviour, the influence of the design rule on the temperature rise and the increase of the breakdown voltage due to the increased device temperature.
|Number of pages||3|
|Publication status||Published - 1992 Jan 1|
|Event||Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 - Tsukuba, Jpn|
Duration: 1992 Aug 26 → 1992 Aug 28
|Other||Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92|
|Period||92/8/26 → 92/8/28|
ASJC Scopus subject areas