Energy transfer efficiency of the 1.54 μm luminescence of Er-implanted silicon in relation to post-implantation annealing and impurity coimplantation

T. Kimura; T. Nakanose; W. Wang; H. Isshiki; R. Saito

doi:10.1016/S0168-583X(98)00719-8

Energy transfer efficiency of the 1.54 μm luminescence of Er-implanted silicon in relation to post-implantation annealing and impurity coimplantation

T. Kimura, T. Nakanose, W. Wang, H. Isshiki, R. Saito

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

CZ-Si (p-type, 0.1-0.2 Ω cm) is implanted with Er ions together with O or Ne ions. The 1.54 μm photoluminescence (PL) intensity and the decay time are measured as functions of ambient temperature from 20 to 200 K. The energy transfer efficiency from host Si to Er³⁺ 4f-electrons is derived from the above results and is found to be temperature dependent. In contrast to the almost temperature independency of the energy transfer efficiency for sufficiently annealed Er-implanted Si, it shows a decreasing tendency above 30-50 K when defects are introduced by Ne ion coimplantation, whereas it shows an increase above ∼100 K when O ions are coimplanted.

Original language	English
Pages (from-to)	486-491
Number of pages	6
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	148
Issue number	1-4
DOIs	https://doi.org/10.1016/S0168-583X(98)00719-8
Publication status	Published - 1999
Externally published	Yes

Keywords

Energy transfer efficiency
Er
Ion implantation
Photoluminescence
Rare earth

ASJC Scopus subject areas

Nuclear and High Energy Physics
Instrumentation

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10.1016/S0168-583X(98)00719-8

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Kimura, T., Nakanose, T., Wang, W., Isshiki, H., & Saito, R. (1999). Energy transfer efficiency of the 1.54 μm luminescence of Er-implanted silicon in relation to post-implantation annealing and impurity coimplantation. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 148(1-4), 486-491. https://doi.org/10.1016/S0168-583X(98)00719-8

Energy transfer efficiency of the 1.54 μm luminescence of Er-implanted silicon in relation to post-implantation annealing and impurity coimplantation. / Kimura, T.; Nakanose, T.; Wang, W. et al.

In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 148, No. 1-4, 1999, p. 486-491.

Research output: Contribution to journal › Article › peer-review

Kimura, T, Nakanose, T, Wang, W, Isshiki, H & Saito, R 1999, 'Energy transfer efficiency of the 1.54 μm luminescence of Er-implanted silicon in relation to post-implantation annealing and impurity coimplantation', Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, vol. 148, no. 1-4, pp. 486-491. https://doi.org/10.1016/S0168-583X(98)00719-8

Kimura T, Nakanose T, Wang W, Isshiki H, Saito R. Energy transfer efficiency of the 1.54 μm luminescence of Er-implanted silicon in relation to post-implantation annealing and impurity coimplantation. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. 1999;148(1-4):486-491. https://doi.org/10.1016/S0168-583X(98)00719-8

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title = "Energy transfer efficiency of the 1.54 μm luminescence of Er-implanted silicon in relation to post-implantation annealing and impurity coimplantation",

abstract = "CZ-Si (p-type, 0.1-0.2 Ω cm) is implanted with Er ions together with O or Ne ions. The 1.54 μm photoluminescence (PL) intensity and the decay time are measured as functions of ambient temperature from 20 to 200 K. The energy transfer efficiency from host Si to Er3+ 4f-electrons is derived from the above results and is found to be temperature dependent. In contrast to the almost temperature independency of the energy transfer efficiency for sufficiently annealed Er-implanted Si, it shows a decreasing tendency above 30-50 K when defects are introduced by Ne ion coimplantation, whereas it shows an increase above ∼100 K when O ions are coimplanted.",

keywords = "Energy transfer efficiency, Er, Ion implantation, Photoluminescence, Rare earth",

author = "T. Kimura and T. Nakanose and W. Wang and H. Isshiki and R. Saito",

note = "Funding Information: This work is partly supported by the grant in aid (no. 07555135) by the Ministry of Education, Science, Sports and Culture. Authors thank Dr. S. Yugo for his valuable discussion. We also thank Dr. H. Yasuhara and Dr. A. Sato of Fujikura Co. for their support of this research.",

year = "1999",

doi = "10.1016/S0168-583X(98)00719-8",

language = "English",

volume = "148",

pages = "486--491",

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T1 - Energy transfer efficiency of the 1.54 μm luminescence of Er-implanted silicon in relation to post-implantation annealing and impurity coimplantation

AU - Kimura, T.

AU - Nakanose, T.

AU - Wang, W.

AU - Isshiki, H.

AU - Saito, R.

N1 - Funding Information: This work is partly supported by the grant in aid (no. 07555135) by the Ministry of Education, Science, Sports and Culture. Authors thank Dr. S. Yugo for his valuable discussion. We also thank Dr. H. Yasuhara and Dr. A. Sato of Fujikura Co. for their support of this research.

PY - 1999

Y1 - 1999

N2 - CZ-Si (p-type, 0.1-0.2 Ω cm) is implanted with Er ions together with O or Ne ions. The 1.54 μm photoluminescence (PL) intensity and the decay time are measured as functions of ambient temperature from 20 to 200 K. The energy transfer efficiency from host Si to Er3+ 4f-electrons is derived from the above results and is found to be temperature dependent. In contrast to the almost temperature independency of the energy transfer efficiency for sufficiently annealed Er-implanted Si, it shows a decreasing tendency above 30-50 K when defects are introduced by Ne ion coimplantation, whereas it shows an increase above ∼100 K when O ions are coimplanted.

AB - CZ-Si (p-type, 0.1-0.2 Ω cm) is implanted with Er ions together with O or Ne ions. The 1.54 μm photoluminescence (PL) intensity and the decay time are measured as functions of ambient temperature from 20 to 200 K. The energy transfer efficiency from host Si to Er3+ 4f-electrons is derived from the above results and is found to be temperature dependent. In contrast to the almost temperature independency of the energy transfer efficiency for sufficiently annealed Er-implanted Si, it shows a decreasing tendency above 30-50 K when defects are introduced by Ne ion coimplantation, whereas it shows an increase above ∼100 K when O ions are coimplanted.

KW - Energy transfer efficiency

KW - Er

KW - Ion implantation

KW - Photoluminescence

KW - Rare earth

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JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

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ER -

Energy transfer efficiency of the 1.54 μm luminescence of Er-implanted silicon in relation to post-implantation annealing and impurity coimplantation

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