Energy transfer efficiency of the 1.54 μm luminescence of Er-implanted silicon in relation to post-implantation annealing and impurity coimplantation

T. Kimura, T. Nakanose, W. Wang, H. Isshiki, R. Saito

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

CZ-Si (p-type, 0.1-0.2 Ω cm) is implanted with Er ions together with O or Ne ions. The 1.54 μm photoluminescence (PL) intensity and the decay time are measured as functions of ambient temperature from 20 to 200 K. The energy transfer efficiency from host Si to Er3+ 4f-electrons is derived from the above results and is found to be temperature dependent. In contrast to the almost temperature independency of the energy transfer efficiency for sufficiently annealed Er-implanted Si, it shows a decreasing tendency above 30-50 K when defects are introduced by Ne ion coimplantation, whereas it shows an increase above ∼100 K when O ions are coimplanted.

Original languageEnglish
Pages (from-to)486-491
Number of pages6
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume148
Issue number1-4
DOIs
Publication statusPublished - 1999

Keywords

  • Energy transfer efficiency
  • Er
  • Ion implantation
  • Photoluminescence
  • Rare earth

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation

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