TY - JOUR
T1 - Energy transfer efficiency of the 1.54 μm luminescence of Er-implanted silicon in relation to post-implantation annealing and impurity coimplantation
AU - Kimura, T.
AU - Nakanose, T.
AU - Wang, W.
AU - Isshiki, H.
AU - Saito, R.
N1 - Funding Information:
This work is partly supported by the grant in aid (no. 07555135) by the Ministry of Education, Science, Sports and Culture. Authors thank Dr. S. Yugo for his valuable discussion. We also thank Dr. H. Yasuhara and Dr. A. Sato of Fujikura Co. for their support of this research.
PY - 1999
Y1 - 1999
N2 - CZ-Si (p-type, 0.1-0.2 Ω cm) is implanted with Er ions together with O or Ne ions. The 1.54 μm photoluminescence (PL) intensity and the decay time are measured as functions of ambient temperature from 20 to 200 K. The energy transfer efficiency from host Si to Er3+ 4f-electrons is derived from the above results and is found to be temperature dependent. In contrast to the almost temperature independency of the energy transfer efficiency for sufficiently annealed Er-implanted Si, it shows a decreasing tendency above 30-50 K when defects are introduced by Ne ion coimplantation, whereas it shows an increase above ∼100 K when O ions are coimplanted.
AB - CZ-Si (p-type, 0.1-0.2 Ω cm) is implanted with Er ions together with O or Ne ions. The 1.54 μm photoluminescence (PL) intensity and the decay time are measured as functions of ambient temperature from 20 to 200 K. The energy transfer efficiency from host Si to Er3+ 4f-electrons is derived from the above results and is found to be temperature dependent. In contrast to the almost temperature independency of the energy transfer efficiency for sufficiently annealed Er-implanted Si, it shows a decreasing tendency above 30-50 K when defects are introduced by Ne ion coimplantation, whereas it shows an increase above ∼100 K when O ions are coimplanted.
KW - Energy transfer efficiency
KW - Er
KW - Ion implantation
KW - Photoluminescence
KW - Rare earth
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U2 - 10.1016/S0168-583X(98)00719-8
DO - 10.1016/S0168-583X(98)00719-8
M3 - Article
AN - SCOPUS:0033513753
VL - 148
SP - 486
EP - 491
JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
SN - 0168-583X
IS - 1-4
ER -