Energy loss of O1s photoelectrons in compositional and structural transition layer at and near the SiO 2/Si interface

H. Nohira, K. Takahashi, T. Hattori

    Research output: Chapter in Book/Report/Conference proceedingChapter

    5 Citations (Scopus)

    Abstract

    The inelastic scattering of O1s photoelectrons in ultra-thin silicon oxides thermally grown on Si(111) and Si(100) surfaces in 1 Torr dry oxygen at 600-880 °C were studied. Following results are obtained: 1) the energy loss of O1s photoelectrons arising from hand gap ionization in SiO 2 can be observed for oxide films with thickness larger than about 1 nm, 2) the energy loss in the energy range from 3 to 9 eV observed for O1s photoelectrons can be mostly correlated with compositional transition layer.

    Original languageEnglish
    Title of host publicationDiffusion and Defect Data Pt.B: Solid State Phenomena
    PublisherScitec Publ Ltd.
    Pages241-244
    Number of pages4
    Volume65-66
    Publication statusPublished - 1999
    EventProceedings of the 1998 4th International Symposium on Ultra Clean Processing of Silicon Surfaces, UCPSS - Ostend, Belg
    Duration: 1998 Sep 211998 Sep 23

    Other

    OtherProceedings of the 1998 4th International Symposium on Ultra Clean Processing of Silicon Surfaces, UCPSS
    CityOstend, Belg
    Period98/9/2198/9/23

    ASJC Scopus subject areas

    • Materials Science(all)
    • Electronic, Optical and Magnetic Materials
    • Physics and Astronomy (miscellaneous)
    • Condensed Matter Physics

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