Abstract
The inelastic scattering of O1s photoelectrons in ultra-thin silicon oxides thermally grown on Si(111) and Si(100) surfaces in 1 Torr dry oxygen at 600-880 °C were studied. Following results are obtained: 1) the energy loss of O1s photoelectrons arising from hand gap ionization in SiO 2 can be observed for oxide films with thickness larger than about 1 nm, 2) the energy loss in the energy range from 3 to 9 eV observed for O1s photoelectrons can be mostly correlated with compositional transition layer.
| Original language | English |
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| Title of host publication | Diffusion and Defect Data Pt.B: Solid State Phenomena |
| Publisher | Scitec Publ Ltd. |
| Pages | 241-244 |
| Number of pages | 4 |
| Volume | 65-66 |
| Publication status | Published - 1999 |
| Event | Proceedings of the 1998 4th International Symposium on Ultra Clean Processing of Silicon Surfaces, UCPSS - Ostend, Belg Duration: 1998 Sep 21 → 1998 Sep 23 |
Other
| Other | Proceedings of the 1998 4th International Symposium on Ultra Clean Processing of Silicon Surfaces, UCPSS |
|---|---|
| City | Ostend, Belg |
| Period | 98/9/21 → 98/9/23 |
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy (miscellaneous)
- Condensed Matter Physics