Energy loss of O1s photoelectrons in compositional and structural transition layer at and near the SiO
            2/Si interface

H. Nohira; K. Takahashi; T. Hattori

Energy loss of O1s photoelectrons in compositional and structural transition layer at and near the SiO ₂/Si interface

H. Nohira, K. Takahashi, T. Hattori

Research output: Chapter in Book/Report/Conference proceeding › Chapter

Abstract

The inelastic scattering of O1s photoelectrons in ultra-thin silicon oxides thermally grown on Si(111) and Si(100) surfaces in 1 Torr dry oxygen at 600-880 °C were studied. Following results are obtained: 1) the energy loss of O1s photoelectrons arising from hand gap ionization in SiO ₂ can be observed for oxide films with thickness larger than about 1 nm, 2) the energy loss in the energy range from 3 to 9 eV observed for O1s photoelectrons can be mostly correlated with compositional transition layer.

Original language	English
Title of host publication	Diffusion and Defect Data Pt.B: Solid State Phenomena
Publisher	Scitec Publ Ltd.
Pages	241-244
Number of pages	4
Volume	65-66
Publication status	Published - 1999
Event	Proceedings of the 1998 4th International Symposium on Ultra Clean Processing of Silicon Surfaces, UCPSS - Ostend, Belg Duration: 1998 Sep 21 → 1998 Sep 23

Other

Other	Proceedings of the 1998 4th International Symposium on Ultra Clean Processing of Silicon Surfaces, UCPSS
City	Ostend, Belg
Period	98/9/21 → 98/9/23

ASJC Scopus subject areas

Materials Science(all)
Electronic, Optical and Magnetic Materials
Physics and Astronomy (miscellaneous)
Condensed Matter Physics

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Nohira, H, Takahashi, K & Hattori, T 1999, Energy loss of O1s photoelectrons in compositional and structural transition layer at and near the SiO ₂/Si interface in Diffusion and Defect Data Pt.B: Solid State Phenomena. vol. 65-66, Scitec Publ Ltd., pp. 241-244, Proceedings of the 1998 4th International Symposium on Ultra Clean Processing of Silicon Surfaces, UCPSS, Ostend, Belg, 98/9/21.

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title = "Energy loss of O1s photoelectrons in compositional and structural transition layer at and near the SiO 2/Si interface ",

abstract = "The inelastic scattering of O1s photoelectrons in ultra-thin silicon oxides thermally grown on Si(111) and Si(100) surfaces in 1 Torr dry oxygen at 600-880 °C were studied. Following results are obtained: 1) the energy loss of O1s photoelectrons arising from hand gap ionization in SiO 2 can be observed for oxide films with thickness larger than about 1 nm, 2) the energy loss in the energy range from 3 to 9 eV observed for O1s photoelectrons can be mostly correlated with compositional transition layer. ",

author = "H. Nohira and K. Takahashi and T. Hattori",

year = "1999",

language = "English",

volume = "65-66",

pages = "241--244",

booktitle = "Diffusion and Defect Data Pt.B: Solid State Phenomena",

publisher = "Scitec Publ Ltd.",

note = "Proceedings of the 1998 4th International Symposium on Ultra Clean Processing of Silicon Surfaces, UCPSS ; Conference date: 21-09-1998 Through 23-09-1998",

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T1 - Energy loss of O1s photoelectrons in compositional and structural transition layer at and near the SiO 2/Si interface

AU - Nohira, H.

AU - Takahashi, K.

AU - Hattori, T.

PY - 1999

Y1 - 1999

N2 - The inelastic scattering of O1s photoelectrons in ultra-thin silicon oxides thermally grown on Si(111) and Si(100) surfaces in 1 Torr dry oxygen at 600-880 °C were studied. Following results are obtained: 1) the energy loss of O1s photoelectrons arising from hand gap ionization in SiO 2 can be observed for oxide films with thickness larger than about 1 nm, 2) the energy loss in the energy range from 3 to 9 eV observed for O1s photoelectrons can be mostly correlated with compositional transition layer.

AB - The inelastic scattering of O1s photoelectrons in ultra-thin silicon oxides thermally grown on Si(111) and Si(100) surfaces in 1 Torr dry oxygen at 600-880 °C were studied. Following results are obtained: 1) the energy loss of O1s photoelectrons arising from hand gap ionization in SiO 2 can be observed for oxide films with thickness larger than about 1 nm, 2) the energy loss in the energy range from 3 to 9 eV observed for O1s photoelectrons can be mostly correlated with compositional transition layer.

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AN - SCOPUS:0032784857

VL - 65-66

SP - 241

EP - 244

BT - Diffusion and Defect Data Pt.B: Solid State Phenomena

PB - Scitec Publ Ltd.

T2 - Proceedings of the 1998 4th International Symposium on Ultra Clean Processing of Silicon Surfaces, UCPSS

Y2 - 21 September 1998 through 23 September 1998

ER -