Energy location of Ce3+ 4f level and majority carrier type in Gd3Al2Ga3O12:Ce crystals studied by surface photovoltage spectroscopy

Mamoru Kitaura; Junpei Azuma; Manabu Ishizaki; Kei Kamada; Shunsuke Kurosawa; Shinta Watanabe; Akimasa Ohnishi; Kazuhiko Hara

doi:10.1063/1.4987141

Energy location of Ce³⁺ 4f level and majority carrier type in Gd₃Al₂Ga₃O₁₂:Ce crystals studied by surface photovoltage spectroscopy

Mamoru Kitaura, Junpei Azuma, Manabu Ishizaki, Kei Kamada, Shunsuke Kurosawa, Shinta Watanabe, Akimasa Ohnishi, Kazuhiko Hara

New Industry Creation Hatchery Center (NICHe)

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

Gd₃Al₂Ga₃O₁₂:Ce (GAGG:Ce) was studied by surface photovoltage spectroscopy using the ultraviolet photoelectron spectroscopy technique with synchrotron radiation and a laser source. The lowest Ce³⁺ 4f level is located below the conduction band minimum by 3.02 eV. This result is supported by the excitation spectrum for photo-stimulated luminescence and is compatible with the value predicted by the vacuum-referred binding energy scheme for GAGG:Ce. It is also found that GAGG:Ce is of the p-type. The information on the energy location of the Ce³⁺ 4f level and majority carrier type provides us with hints on how to improve the optical properties of GAGG:Ce for photonic device applications.

Original language	English
Article number	251101
Journal	Applied Physics Letters
Volume	110
Issue number	25
DOIs	https://doi.org/10.1063/1.4987141
Publication status	Published - 2017 Jun 19

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Energy location of Ce3+ 4f level and majority carrier type in Gd3Al2Ga3O12:Ce crystals studied by surface photovoltage spectroscopy",

abstract = "Gd3Al2Ga3O12:Ce (GAGG:Ce) was studied by surface photovoltage spectroscopy using the ultraviolet photoelectron spectroscopy technique with synchrotron radiation and a laser source. The lowest Ce3+ 4f level is located below the conduction band minimum by 3.02 eV. This result is supported by the excitation spectrum for photo-stimulated luminescence and is compatible with the value predicted by the vacuum-referred binding energy scheme for GAGG:Ce. It is also found that GAGG:Ce is of the p-type. The information on the energy location of the Ce3+ 4f level and majority carrier type provides us with hints on how to improve the optical properties of GAGG:Ce for photonic device applications.",

author = "Mamoru Kitaura and Junpei Azuma and Manabu Ishizaki and Kei Kamada and Shunsuke Kurosawa and Shinta Watanabe and Akimasa Ohnishi and Kazuhiko Hara",

note = "Funding Information: The present study was supported through KAKENHI (Grant No. 26420673) from the Japan Society for the Promotion of Science (JSPS), Cooperative Research Project of Research Institute of Electronics, Shizuoka University, and the Inter-University Cooperative Research Program of the Institute for Materials Research, Tohoku University. Publisher Copyright: {\textcopyright} 2017 Author(s).",

year = "2017",

month = jun,

day = "19",

doi = "10.1063/1.4987141",

language = "English",

volume = "110",

journal = "Applied Physics Letters",

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T1 - Energy location of Ce3+ 4f level and majority carrier type in Gd3Al2Ga3O12:Ce crystals studied by surface photovoltage spectroscopy

AU - Kitaura, Mamoru

AU - Azuma, Junpei

AU - Ishizaki, Manabu

AU - Kamada, Kei

AU - Kurosawa, Shunsuke

AU - Watanabe, Shinta

AU - Ohnishi, Akimasa

AU - Hara, Kazuhiko

N1 - Funding Information: The present study was supported through KAKENHI (Grant No. 26420673) from the Japan Society for the Promotion of Science (JSPS), Cooperative Research Project of Research Institute of Electronics, Shizuoka University, and the Inter-University Cooperative Research Program of the Institute for Materials Research, Tohoku University. Publisher Copyright: © 2017 Author(s).

PY - 2017/6/19

Y1 - 2017/6/19

N2 - Gd3Al2Ga3O12:Ce (GAGG:Ce) was studied by surface photovoltage spectroscopy using the ultraviolet photoelectron spectroscopy technique with synchrotron radiation and a laser source. The lowest Ce3+ 4f level is located below the conduction band minimum by 3.02 eV. This result is supported by the excitation spectrum for photo-stimulated luminescence and is compatible with the value predicted by the vacuum-referred binding energy scheme for GAGG:Ce. It is also found that GAGG:Ce is of the p-type. The information on the energy location of the Ce3+ 4f level and majority carrier type provides us with hints on how to improve the optical properties of GAGG:Ce for photonic device applications.

AB - Gd3Al2Ga3O12:Ce (GAGG:Ce) was studied by surface photovoltage spectroscopy using the ultraviolet photoelectron spectroscopy technique with synchrotron radiation and a laser source. The lowest Ce3+ 4f level is located below the conduction band minimum by 3.02 eV. This result is supported by the excitation spectrum for photo-stimulated luminescence and is compatible with the value predicted by the vacuum-referred binding energy scheme for GAGG:Ce. It is also found that GAGG:Ce is of the p-type. The information on the energy location of the Ce3+ 4f level and majority carrier type provides us with hints on how to improve the optical properties of GAGG:Ce for photonic device applications.

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Energy location of Ce³⁺ 4f level and majority carrier type in Gd₃Al₂Ga₃O₁₂:Ce crystals studied by surface photovoltage spectroscopy

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