Abstract
Gd3Al2Ga3O12:Ce (GAGG:Ce) was studied by surface photovoltage spectroscopy using the ultraviolet photoelectron spectroscopy technique with synchrotron radiation and a laser source. The lowest Ce3+ 4f level is located below the conduction band minimum by 3.02 eV. This result is supported by the excitation spectrum for photo-stimulated luminescence and is compatible with the value predicted by the vacuum-referred binding energy scheme for GAGG:Ce. It is also found that GAGG:Ce is of the p-type. The information on the energy location of the Ce3+ 4f level and majority carrier type provides us with hints on how to improve the optical properties of GAGG:Ce for photonic device applications.
Original language | English |
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Article number | 251101 |
Journal | Applied Physics Letters |
Volume | 110 |
Issue number | 25 |
DOIs | |
Publication status | Published - 2017 Jun 19 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)