Energy-filtered electron diffraction and high-resolution electron microscopy on short-range ordered structure in GaAs0.5Sb0.5

Daisuke Shindo, Yoichi Ikematsu, Chang Woo Lee, Tohru Suzuki, Toshinari Ichihashi, Chung Chi Hsu

    Research output: Contribution to journalArticlepeer-review

    4 Citations (Scopus)

    Abstract

    Characteristic intensity distribution of diffuse scattering in III-V alloy semiconductor GaAs0.5Sb0.5 epitaxially grown was observed by the energy-filtered electron diffraction method with [1̄10] incidence. The diffuse scattering situates at the one-third positions between the fundamental reflections extending parallel to the q002 direction in the reciprocal space. A high-resolution electron microscope image shows weak contrast modulation corresponding to the diffuse scattering. The image processed with the Fourier transform by selecting the diffuse scattering and a fundamental reflection shows small regions consisting of bright dots being elongated along the (111) planes and aligning on the (002) planes, which are considered to result from the ordering of As and Sb during the growth process. The effect of including the fundamental reflection for imaging the ordered regions in the image processing method is also discussed. Finally, based on the results obtained by energy-filtered electron diffraction and high-resolution electron microscopy, a simple structure model for the short-range ordered structure in GaAs0.5Sb0.5 is proposed.

    Original languageEnglish
    Pages (from-to)29-34
    Number of pages6
    JournalJournal of Electron Microscopy
    Volume51
    Issue number1
    DOIs
    Publication statusPublished - 2002 Apr 22

    Keywords

    • Diffuse scattering
    • Energy filtering
    • High-resolution electron microscopy
    • Image processing
    • Short-range ordered structure

    ASJC Scopus subject areas

    • Instrumentation

    Fingerprint

    Dive into the research topics of 'Energy-filtered electron diffraction and high-resolution electron microscopy on short-range ordered structure in GaAs0.5Sb0.5'. Together they form a unique fingerprint.

    Cite this