Energy distribution of interface states generated by oxygen plasma treatment for control of threshold voltage in pentacene thin-film transistors

Yoshinari Kimura, Yoshiaki Hattori, Masatoshi Kitamura

Research output: Contribution to journalArticlepeer-review

Abstract

Pentacene metal-oxide-semiconductor (MOS) capacitors with a SiO2 dielectric treated by oxygen plasma have been studied by capacitance-voltage (C-V) measurements to investigate the energy distribution of the interface states. Oxygen plasma treatment, which is used for control of the threshold voltage in pentacene thin-film transistors, shifted the C-V curves of pentacene MOS capacitors to a positive gate voltage as well as the transfer curves of pentacene thin-film transistors (TFTs). The shift is explained by electrons captured at interface states generated by oxygen plasma treatment. The interface states capturing the electrons are expected to locate at low energy levels. The energy distribution of the interface states locating at middle or high energy levels was extracted by a method equivalent to the Terman method. By use of the method in two steps, the interface state densities distributed at middle and high energy levels (D M and D H) were separately obtained. D M and D H were of the order of 1010-1012 cm-2 eV-1, and increased with an increase in plasma treatment time.

Original languageEnglish
Article number505106
JournalJournal of Physics D: Applied Physics
Volume53
Issue number50
DOIs
Publication statusPublished - 2020 Dec
Externally publishedYes

Keywords

  • C-V measurement
  • MOS capacitors
  • interface states
  • oxygen plasma
  • pentacene

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

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