Energy Dependence of the Formation Yield of ⁵¹Cr(acac)₃ in Recoil Implantation Using a Thin Film Technique

Recoil implantation induced by nuclear reaction was applied to study energy dependence of the yield of the implantation reaction product. The energy control was made possible by using thin film recoil sources and changing the thickness of the source. Implantation energy at each condition was estimated by using the LSS theory and models considering the energetics of nuclear reactions. Using the mean value of thus estimated implantation energy, energy dependence of the ⁵¹Cr(acac)₃yield, produced when ⁵¹Cr was implanted into Fe(acac)₃, was investigated. The ⁵¹Cr(acac)₃yield increased steeply with increase of mean implantation energy (MIE) until 30 keV, and then it increased slowly. The probable reason is discussed.