Energy Dependence of the Formation Yield of 51Cr(acac)3 in Recoil Implantation Using a Thin Film Technique

A. Miyakawa, T. Sekine, K. Yoshihara

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8 Citations (Scopus)

Abstract

Recoil implantation induced by nuclear reaction was applied to study energy dependence of the yield of the implantation reaction product. The energy control was made possible by using thin film recoil sources and changing the thickness of the source. Implantation energy at each condition was estimated by using the LSS theory and models considering the energetics of nuclear reactions. Using the mean value of thus estimated implantation energy, energy dependence of the 51Cr(acac)3yield, produced when 51Cr was implanted into Fe(acac)3, was investigated. The 51Cr(acac)3yield increased steeply with increase of mean implantation energy (MIE) until 30 keV, and then it increased slowly. The probable reason is discussed.

Original languageEnglish
Pages (from-to)11-16
Number of pages6
JournalRadiochimica Acta
Volume48
Issue number1-2
DOIs
Publication statusPublished - 1989 Aug

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry

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