Energy barrier for valence electrons at SiO2/Si(111) interface

Kensuke Takahashi, Mustafa Bin Seman, Kazuyuki Hirose, Takeo Hattori

    Research output: Contribution to journalArticlepeer-review

    19 Citations (Scopus)
    Original languageEnglish
    Pages (from-to)L223-L225
    JournalJapanese Journal of Applied Physics, Part 2: Letters
    Issue number3 A
    Publication statusPublished - 2002 Mar 1


    • Electron energy loss spectroscopy
    • SiO/Si interface
    • Silicon oxide
    • Tunneling
    • Valence band
    • Virtual electronic states
    • X-ray photoelectron spectroscopy

    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy (miscellaneous)
    • Physics and Astronomy(all)

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