Energy barrier for valence electrons at SiO2/Si(111) interface

Kensuke Takahashi, Mustafa Bin Seman, Kazuyuki Hirose, Takeo Hattori

    Research output: Contribution to journalArticle

    19 Citations (Scopus)
    Original languageEnglish
    Pages (from-to)L223-L225
    JournalJapanese Journal of Applied Physics, Part 2: Letters
    Volume41
    Issue number3 A
    DOIs
    Publication statusPublished - 2002 Mar 1

    Keywords

    • Electron energy loss spectroscopy
    • SiO/Si interface
    • Silicon oxide
    • Tunneling
    • Valence band
    • Virtual electronic states
    • X-ray photoelectron spectroscopy

    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy (miscellaneous)
    • Physics and Astronomy(all)

    Fingerprint Dive into the research topics of 'Energy barrier for valence electrons at SiO<sub>2</sub>/Si(111) interface'. Together they form a unique fingerprint.

  • Cite this