Energy band engineering of metal nanodots for high performance nonvolatile memory application

Yanli Pei, Tatsuro Hiraki, Toshiya Kojima, Takafumi Fukushima, Mitsumasa Koyanagi, Tetsu Tanaka

Research output: Chapter in Book/Report/Conference proceedingConference contribution


In this work, high density and small size metal nanodots (MND) with different workfunctions were fabricated as a floating gate of nonvolatile memory (NVM) devices by selfassembled nanodot deposition (SAND). The energy band engineering of NVM was demonstrated through controlling MND work-function. For single MND layer floating gate NVM, the retention time was improved by choosing high work-function MND. Furthermore, we proposed a new type NVM with a double stacked MND floating gate. Here, the high work-function MND are placed on the top layer and the low work-function MND are placed on the bottom layer. A large memory window and long retention time were obtained. However, the thermal electron excitation is dominant for the electron discharge process during retention. How to reduce the defects in MND layer is important for further improving of memory characteristics.

Original languageEnglish
Title of host publicationTechnology Evolution for Silicon Nano-Electronics
PublisherTrans Tech Publications Ltd
Number of pages6
ISBN (Print)9783037850510
Publication statusPublished - 2011

Publication series

NameKey Engineering Materials
ISSN (Print)1013-9826
ISSN (Electronic)1662-9795


  • Energy band engineering
  • Metal nanodots
  • Nonvolatile memory
  • Retention

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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