TY - GEN
T1 - Energy band engineering of metal nanodots for high performance nonvolatile memory application
AU - Pei, Yanli
AU - Hiraki, Tatsuro
AU - Kojima, Toshiya
AU - Fukushima, Takafumi
AU - Koyanagi, Mitsumasa
AU - Tanaka, Tetsu
N1 - Copyright:
Copyright 2020 Elsevier B.V., All rights reserved.
PY - 2011
Y1 - 2011
N2 - In this work, high density and small size metal nanodots (MND) with different workfunctions were fabricated as a floating gate of nonvolatile memory (NVM) devices by selfassembled nanodot deposition (SAND). The energy band engineering of NVM was demonstrated through controlling MND work-function. For single MND layer floating gate NVM, the retention time was improved by choosing high work-function MND. Furthermore, we proposed a new type NVM with a double stacked MND floating gate. Here, the high work-function MND are placed on the top layer and the low work-function MND are placed on the bottom layer. A large memory window and long retention time were obtained. However, the thermal electron excitation is dominant for the electron discharge process during retention. How to reduce the defects in MND layer is important for further improving of memory characteristics.
AB - In this work, high density and small size metal nanodots (MND) with different workfunctions were fabricated as a floating gate of nonvolatile memory (NVM) devices by selfassembled nanodot deposition (SAND). The energy band engineering of NVM was demonstrated through controlling MND work-function. For single MND layer floating gate NVM, the retention time was improved by choosing high work-function MND. Furthermore, we proposed a new type NVM with a double stacked MND floating gate. Here, the high work-function MND are placed on the top layer and the low work-function MND are placed on the bottom layer. A large memory window and long retention time were obtained. However, the thermal electron excitation is dominant for the electron discharge process during retention. How to reduce the defects in MND layer is important for further improving of memory characteristics.
KW - Energy band engineering
KW - Metal nanodots
KW - Nonvolatile memory
KW - Retention
UR - http://www.scopus.com/inward/record.url?scp=79952748778&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=79952748778&partnerID=8YFLogxK
U2 - 10.4028/www.scientific.net/KEM.470.140
DO - 10.4028/www.scientific.net/KEM.470.140
M3 - Conference contribution
AN - SCOPUS:79952748778
SN - 9783037850510
T3 - Key Engineering Materials
SP - 140
EP - 145
BT - Technology Evolution for Silicon Nano-Electronics
PB - Trans Tech Publications Ltd
ER -