Energy band diagram of a H-terminated P-doped n-type diamond (111) surface

Shozo Kono, Kenji Mizuochi, Go Takyo, Tadahiko Goto, Tadashi Abukawa, Tomohiro Aoyama

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The energy band diagram of a hydrogen-terminated phosphorous-doped n-type diamond (111) surface has been studied by X-ray photoelectron spectroscopy and He-I excited secondary electron spectroscopy (SES). The resulting surface energy band diagram showed an upward band bending of ∼3.2 eV toward the surface with the Fermi level position being 1.8 eV above the valence band maximum. The cutoff energy in SES spectra turned out to be the conduction band minimum within an error of 0.1 eV; thus, the electron affinity of the present n-type sample can be said to be negative. The mechanism of the upward band bending for n-type diamonds is discussed in terms of the Fermi level pinning caused by surface defects such as graphite.

Original languageEnglish
Pages (from-to)231-242
Number of pages12
JournalNew Diamond and Frontier Carbon Technology
Volume17
Issue number5
Publication statusPublished - 2007 Dec 1

ASJC Scopus subject areas

  • Materials Science(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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    Kono, S., Mizuochi, K., Takyo, G., Goto, T., Abukawa, T., & Aoyama, T. (2007). Energy band diagram of a H-terminated P-doped n-type diamond (111) surface. New Diamond and Frontier Carbon Technology, 17(5), 231-242.