Empirical modeling of metal-contact effects on graphene field-effect transistors

Ryo Nouchi, Katsumi Tanigaki

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

An empirical model is developed to characterize metal-contact effects on the transfer characteristics of graphene field-effect transistors. The present model is based on a diffusive transport, and considers charge carrier doping from metallic electrodes to the adjacent graphene channel. An electron-hole conductivity asymmetry, one of the main features in the transfer characteristics, is well reproduced by the model. Model calculations with varied parameters show that the conductivity asymmetry becomes more distinct with higher charge-carrier mobility, higher doping level at the metal contacts, larger extent of the doped region near the contacts, or shorter channel lengths.

Original languageEnglish
Article number070109
JournalJapanese journal of applied physics
Volume50
Issue number7 PART 1
DOIs
Publication statusPublished - 2011 Jul 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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