This is a study of emission spectral width broadening for 1.3 μm and 1.5 μm InGaAsP/InP superluminescent diodes (SLDs). It proposes two new fabricated structures, stacked active layer (STAC) and tandem active layer (TANAC), and confirms that the emission spectral widths can be successfully broadened for both. By applying these new active layer structures to laser diodes (LDs), two new functions are demonstrated. One is wavelength-switching in STAC LDs and the other is SLD/LD mode switching in TANAC LDs.
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