Emission spectral width broadening for InGaAsP/InP superluminescent diodes

O. Mikami, Y. Noguchi, H. Yasaka, K. Magari, S. Kondo

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


This is a study of emission spectral width broadening for 1.3 μm and 1.5 μm InGaAsP/InP superluminescent diodes (SLDs). It proposes two new fabricated structures, stacked active layer (STAC) and tandem active layer (TANAC), and confirms that the emission spectral widths can be successfully broadened for both. By applying these new active layer structures to laser diodes (LDs), two new functions are demonstrated. One is wavelength-switching in STAC LDs and the other is SLD/LD mode switching in TANAC LDs.

Original languageEnglish
Pages (from-to)133-137
Number of pages5
JournalIEE proceedings. Part J, Optoelectronics
Issue number2
Publication statusPublished - 1991 Jan 1
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)


Dive into the research topics of 'Emission spectral width broadening for InGaAsP/InP superluminescent diodes'. Together they form a unique fingerprint.

Cite this