Emission of terahertz radiation from two-dimensional electron systems in semiconductor nano- and hetero-structures

Taiichi Otsuji, Takayuki Watanabe, Amine El Moutaouakil, Hiromi Karasawa, Tsuneyoshi Komori, Akira Satou, Tetsuya Suemitsu, Maki Suemitsu, Eiichi Sano, Wojciech Knap, Victor Ryzhii

Research output: Contribution to journalArticle

25 Citations (Scopus)

Abstract

This paper reviews recent advances in emission of terahertz radiation from two-dimensional (2D) electron systems in semiconductor nano-heterostructures. 2D plasmon resonance is first presented to demonstrate intense broadband terahertz emission from InGaP/InGaAs/GaAs and InAlAs/InGaAs/InP material systems. The device structure is based on a high-electron mobility transistor and incorporates the author's original interdigitated dual-grating gates. Second topic focuses on graphene, a monolayer carbon-atomic honeycomb lattice crystal, exhibiting unique carrier transport and optical properties owing to massless and gapless energy spectrum. Coherent stimulated terahertz emission from femtosecond infrared-laser pumped epitaxial graphene is experimentally observed, reflecting the occurrence of negative dynamic conductivity and population inversion.

Original languageEnglish
Pages (from-to)629-645
Number of pages17
JournalJournal of Infrared, Millimeter, and Terahertz Waves
Volume32
Issue number5
DOIs
Publication statusPublished - 2011 May 1

Keywords

  • Graphene
  • Heterostructures
  • Plasmons
  • Terahertz emission
  • Two-dimensional electrons

ASJC Scopus subject areas

  • Radiation
  • Instrumentation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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