Emission from the higher-order excitons in ZnO films grown by laser molecular-beam epitaxy

A. Tsukazaki, A. Ohtomo, M. Kawasaki, T. Makino, C. H. Chia, Y. Segawa, H. Koinuma

Research output: Contribution to journalArticlepeer-review

38 Citations (Scopus)

Abstract

The growth of epitaxial ZnO thin films by laser molecular-beam epitaxy on lattice-matched ScAlMgO4 substrates following the deposition and annealing of suitable buffer layers was discussed. The films were characterized by low-temperature photoluminescence (PL), absorption and reflectivity measurements. It was shown that PL from higher order (n=2) excitons (A exciton) was observed at temperatures lower than 40 K. It was observed that the absorption spectrum contained lines and the reflection spectrum exhibited anomalies that were assigned to the excited-states (n=2, 3) of A and B excitons.

Original languageEnglish
Pages (from-to)3858-3860
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number19
DOIs
Publication statusPublished - 2004 May 10

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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