Emission and intensity modulation of terahertz electromagnetic radiation utilizing 2-dimensional plasmons in dual-grating-gate HEMT's

Taiichi Otsuji; Takuya Nishimura; Yuki Tsuda; Yahya Moubarak Meziani; Tetsuya Suemitsu; Eiichi Sano

doi:10.1142/S0129156409006072

Emission and intensity modulation of terahertz electromagnetic radiation utilizing 2-dimensional plasmons in dual-grating-gate HEMT's

Taiichi Otsuji, Takuya Nishimura, Yuki Tsuda, Yahya Moubarak Meziani, Tetsuya Suemitsu, Eiichi Sano

Broadband Engineering Division

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Two dimensional plasmons in submicron transistors have attracted much attention due to their nature of promoting emission/detection of electromagnetic radiation in the terahertz range. We have recently proposed and fabricated a highly efficient, broadband plasmon-resonant terahertz emitter. The device incorporates doubly interdigitated grating gates and a vertical cavity into a high electron mobility transistor. The device operates in various modes: (1) DC-current-driven self oscillation, (2) CW-laser excited terahertz emission, (3) two-photon injection-locked difference-frequency terahertz emission, and (4) impulsive laser excited terahertz emission. Furthermore, the device can operate in completely different functionalities including ultrahigh-speed intensity modulation for terahertz carrier waves. This paper reviews recent advances on plasma wave devices.

Original language	English
Pages (from-to)	33-53
Number of pages	21
Journal	International Journal of High Speed Electronics and Systems
Volume	19
Issue number	1
DOIs	https://doi.org/10.1142/S0129156409006072
Publication status	Published - 2009 Mar

Keywords

Emitter
Injection locking
Instability
Intensity modulator
Plasmon
Resonance
Terahertz

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Hardware and Architecture
Electrical and Electronic Engineering

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10.1142/S0129156409006072

Cite this

Emission and intensity modulation of terahertz electromagnetic radiation utilizing 2-dimensional plasmons in dual-grating-gate HEMT's. / Otsuji, Taiichi; Nishimura, Takuya; Tsuda, Yuki; Meziani, Yahya Moubarak; Suemitsu, Tetsuya; Sano, Eiichi.

In: International Journal of High Speed Electronics and Systems, Vol. 19, No. 1, 03.2009, p. 33-53.

Research output: Contribution to journal › Article › peer-review

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title = "Emission and intensity modulation of terahertz electromagnetic radiation utilizing 2-dimensional plasmons in dual-grating-gate HEMT's",

abstract = "Two dimensional plasmons in submicron transistors have attracted much attention due to their nature of promoting emission/detection of electromagnetic radiation in the terahertz range. We have recently proposed and fabricated a highly efficient, broadband plasmon-resonant terahertz emitter. The device incorporates doubly interdigitated grating gates and a vertical cavity into a high electron mobility transistor. The device operates in various modes: (1) DC-current-driven self oscillation, (2) CW-laser excited terahertz emission, (3) two-photon injection-locked difference-frequency terahertz emission, and (4) impulsive laser excited terahertz emission. Furthermore, the device can operate in completely different functionalities including ultrahigh-speed intensity modulation for terahertz carrier waves. This paper reviews recent advances on plasma wave devices.",

keywords = "Emitter, Injection locking, Instability, Intensity modulator, Plasmon, Resonance, Terahertz",

author = "Taiichi Otsuji and Takuya Nishimura and Yuki Tsuda and Meziani, {Yahya Moubarak} and Tetsuya Suemitsu and Eiichi Sano",

note = "Funding Information: The authors would like to acknowledge Prof. T. Asano at Kyuhsu University, Japan, and all the students in Otsuji and Sano Laboratories for their extensive contributions throughout this work. They also thank Prof. W. Knap at Tohoku University, Japan (on leave from CNRS, France), Drs. D. Coquillat and F. Teppe at GES-UMR5650, CNRS and Montpellier 2 University, France for their experimental support and Prof. Victor Ryzhii at Univ. of Aizu, Japan and Prof. V.V. Popov and Dr. G.M. Tsymbalov at Inst. Radio Eng. Electron., Saratov Branch, Russia for their theoretical support, and Prof. K. Narahara at Yamagata University, Japan, Prof. M. Dyakonov at Montpellier 2 University, France, and Prof. M. Shur at Rensselaer Polytechnic Institute for many helpful discussions. This work was financially supported in part by the SCOPE Programme from the MIC, Japan, and by the Grant in Aid for Basic Research (S) from the JSPS, Japan.",

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AU - Tsuda, Yuki

AU - Meziani, Yahya Moubarak

AU - Suemitsu, Tetsuya

AU - Sano, Eiichi

N1 - Funding Information: The authors would like to acknowledge Prof. T. Asano at Kyuhsu University, Japan, and all the students in Otsuji and Sano Laboratories for their extensive contributions throughout this work. They also thank Prof. W. Knap at Tohoku University, Japan (on leave from CNRS, France), Drs. D. Coquillat and F. Teppe at GES-UMR5650, CNRS and Montpellier 2 University, France for their experimental support and Prof. Victor Ryzhii at Univ. of Aizu, Japan and Prof. V.V. Popov and Dr. G.M. Tsymbalov at Inst. Radio Eng. Electron., Saratov Branch, Russia for their theoretical support, and Prof. K. Narahara at Yamagata University, Japan, Prof. M. Dyakonov at Montpellier 2 University, France, and Prof. M. Shur at Rensselaer Polytechnic Institute for many helpful discussions. This work was financially supported in part by the SCOPE Programme from the MIC, Japan, and by the Grant in Aid for Basic Research (S) from the JSPS, Japan.

PY - 2009/3

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N2 - Two dimensional plasmons in submicron transistors have attracted much attention due to their nature of promoting emission/detection of electromagnetic radiation in the terahertz range. We have recently proposed and fabricated a highly efficient, broadband plasmon-resonant terahertz emitter. The device incorporates doubly interdigitated grating gates and a vertical cavity into a high electron mobility transistor. The device operates in various modes: (1) DC-current-driven self oscillation, (2) CW-laser excited terahertz emission, (3) two-photon injection-locked difference-frequency terahertz emission, and (4) impulsive laser excited terahertz emission. Furthermore, the device can operate in completely different functionalities including ultrahigh-speed intensity modulation for terahertz carrier waves. This paper reviews recent advances on plasma wave devices.

AB - Two dimensional plasmons in submicron transistors have attracted much attention due to their nature of promoting emission/detection of electromagnetic radiation in the terahertz range. We have recently proposed and fabricated a highly efficient, broadband plasmon-resonant terahertz emitter. The device incorporates doubly interdigitated grating gates and a vertical cavity into a high electron mobility transistor. The device operates in various modes: (1) DC-current-driven self oscillation, (2) CW-laser excited terahertz emission, (3) two-photon injection-locked difference-frequency terahertz emission, and (4) impulsive laser excited terahertz emission. Furthermore, the device can operate in completely different functionalities including ultrahigh-speed intensity modulation for terahertz carrier waves. This paper reviews recent advances on plasma wave devices.

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Emission and intensity modulation of terahertz electromagnetic radiation utilizing 2-dimensional plasmons in dual-grating-gate HEMT's

Abstract

Keywords

ASJC Scopus subject areas

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