Emission and intensity modulation of terahertz electromagnetic radiation utilizing 2-dimensional plasmons in dual-grating-gate HEMT's

Taiichi Otsuji, Takuya Nishimura, Yuki Tsuda, Yahya Moubarak Meziani, Tetsuya Suemitsu, Eiichi Sano

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

Two dimensional plasmons in submicron transistors have attracted much attention due to their nature of promoting emission/detection of electromagnetic radiation in the terahertz range. We have recently proposed and fabricated a highly efficient, broadband plasmon-resonant terahertz emitter. The device incorporates doubly interdigitated grating gates and a vertical cavity into a high electron mobility transistor. The device operates in various modes: (1) DC-current-driven self oscillation, (2) CW-laser excited terahertz emission, (3) two-photon injection-locked difference-frequency terahertz emission, and (4) impulsive laser excited terahertz emission. Furthermore, the device can operate in completely different functionalities including ultrahigh-speed intensity modulation for terahertz carrier waves. This paper reviews recent advances on plasma wave devices.

Original languageEnglish
Pages (from-to)33-53
Number of pages21
JournalInternational Journal of High Speed Electronics and Systems
Volume19
Issue number1
DOIs
Publication statusPublished - 2009 Mar 1

Keywords

  • Emitter
  • Injection locking
  • Instability
  • Intensity modulator
  • Plasmon
  • Resonance
  • Terahertz

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Hardware and Architecture
  • Electrical and Electronic Engineering

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