Emission and intensity modulation of terahertz electromagnetic radiation utilizing 2-dimensional plasmons in dual-grating-gate HEMT's

Taiichi Otsuji; Takuya Nishimura; Yuki Tsuda; Yahya Moubarak Meziani; Tetsuya Suemitsu; Eiichi Sano

doi:10.1142/S0129156409006072

Emission and intensity modulation of terahertz electromagnetic radiation utilizing 2-dimensional plasmons in dual-grating-gate HEMT's

Taiichi Otsuji, Takuya Nishimura, Yuki Tsuda, Yahya Moubarak Meziani, Tetsuya Suemitsu, Eiichi Sano

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Two dimensional plasmons in submicron transistors have attracted much attention due to their nature of promoting emission/detection of electromagnetic radiation in the terahertz range. We have recently proposed and fabricated a highly efficient, broadband plasmon-resonant terahertz emitter. The device incorporates doubly interdigitated grating gates and a vertical cavity into a high electron mobility transistor. The device operates in various modes: (1) DC-current-driven self oscillation, (2) CW-laser excited terahertz emission, (3) two-photon injection-locked difference-frequency terahertz emission, and (4) impulsive laser excited terahertz emission. Furthermore, the device can operate in completely different functionalities including ultrahigh-speed intensity modulation for terahertz carrier waves. This paper reviews recent advances on plasma wave devices.

Original language	English
Pages (from-to)	33-53
Number of pages	21
Journal	International Journal of High Speed Electronics and Systems
Volume	19
Issue number	1
DOIs	https://doi.org/10.1142/S0129156409006072
Publication status	Published - 2009 Mar 1

Keywords

Emitter
Injection locking
Instability
Intensity modulator
Plasmon
Resonance
Terahertz

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Hardware and Architecture
Electrical and Electronic Engineering

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Emission and intensity modulation of terahertz electromagnetic radiation utilizing 2-dimensional plasmons in dual-grating-gate HEMT's. / Otsuji, Taiichi; Nishimura, Takuya; Tsuda, Yuki; Meziani, Yahya Moubarak; Suemitsu, Tetsuya; Sano, Eiichi.

In: International Journal of High Speed Electronics and Systems, Vol. 19, No. 1, 01.03.2009, p. 33-53.

Research output: Contribution to journal › Article › peer-review

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title = "Emission and intensity modulation of terahertz electromagnetic radiation utilizing 2-dimensional plasmons in dual-grating-gate HEMT's",

abstract = "Two dimensional plasmons in submicron transistors have attracted much attention due to their nature of promoting emission/detection of electromagnetic radiation in the terahertz range. We have recently proposed and fabricated a highly efficient, broadband plasmon-resonant terahertz emitter. The device incorporates doubly interdigitated grating gates and a vertical cavity into a high electron mobility transistor. The device operates in various modes: (1) DC-current-driven self oscillation, (2) CW-laser excited terahertz emission, (3) two-photon injection-locked difference-frequency terahertz emission, and (4) impulsive laser excited terahertz emission. Furthermore, the device can operate in completely different functionalities including ultrahigh-speed intensity modulation for terahertz carrier waves. This paper reviews recent advances on plasma wave devices.",

keywords = "Emitter, Injection locking, Instability, Intensity modulator, Plasmon, Resonance, Terahertz",

author = "Taiichi Otsuji and Takuya Nishimura and Yuki Tsuda and Meziani, {Yahya Moubarak} and Tetsuya Suemitsu and Eiichi Sano",

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AU - Otsuji, Taiichi

AU - Nishimura, Takuya

AU - Tsuda, Yuki

AU - Meziani, Yahya Moubarak

AU - Suemitsu, Tetsuya

AU - Sano, Eiichi

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AB - Two dimensional plasmons in submicron transistors have attracted much attention due to their nature of promoting emission/detection of electromagnetic radiation in the terahertz range. We have recently proposed and fabricated a highly efficient, broadband plasmon-resonant terahertz emitter. The device incorporates doubly interdigitated grating gates and a vertical cavity into a high electron mobility transistor. The device operates in various modes: (1) DC-current-driven self oscillation, (2) CW-laser excited terahertz emission, (3) two-photon injection-locked difference-frequency terahertz emission, and (4) impulsive laser excited terahertz emission. Furthermore, the device can operate in completely different functionalities including ultrahigh-speed intensity modulation for terahertz carrier waves. This paper reviews recent advances on plasma wave devices.

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KW - Instability

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KW - Plasmon

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Emission and intensity modulation of terahertz electromagnetic radiation utilizing 2-dimensional plasmons in dual-grating-gate HEMT's

Abstract

Keywords

ASJC Scopus subject areas

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