Emission and detection of terahertz radiation using two-dimensional electrons in III-V semiconductors and graphene

Taiichi Otsuji, Takayuki Watanabe, Stephane A.Boubanga Tombet, Akira Satou, Wojciech M. Knap, Vyacheslav V. Popov, Maxim Ryzhii, Victor Ryzhii

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Recent advances in emission and detection of terahertz radiation using two-dimensional (2D) electron systems in III-V semiconductors and graphene. 2D plasmon resonance is first presented to demonstrate intense broadband terahertz emission and detection from InGaP/InGaAs/GaAs and InAlAs/InGaAs/InP material systems. The device structure is based on a high-electron mobility transistor and incorporates the author's original asymmetrically interdigitated dual-grating gates. Second topic focuses on graphene, a monolayer carbon-atomic honeycomb lattice crystal, exhibiting peculiar carrier transport and optical properties owing to massless and gapless energy spectrum. Theoretical and experimental studies toward the creation of graphene terahertz injection lasers are described.

Original languageEnglish
Title of host publication23rd International Symposium on Space Terahertz Technology 2012, ISSTT 2012
Pages23-26
Number of pages4
Publication statusPublished - 2012 Dec 1
Event23rd International Symposium on Space Terahertz Technology 2012, ISSTT 2012 - Tokyo, Japan
Duration: 2012 Apr 22012 Apr 4

Publication series

Name23rd International Symposium on Space Terahertz Technology 2012, ISSTT 2012

Other

Other23rd International Symposium on Space Terahertz Technology 2012, ISSTT 2012
CountryJapan
CityTokyo
Period12/4/212/4/4

Keywords

  • Compound semiconductors
  • Detectors
  • Graphene
  • Lasers
  • Plasmons
  • Terahertz

ASJC Scopus subject areas

  • Computer Networks and Communications

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