Abstract
This paper reviews recent advances in emission and detection of terahertz radiation using two dimensional (2D) plasmons in semiconductor nano-heterostructures for nondestructive evaluations. The 2D plasmon resonance is introduced as the operation principle for broadband emission and detection of terahertz radiation. The device structure is based on a high-electron mobility transistor and incorporates the authors' original asymmetrically interdigitated dualgrating gates. Excellent terahertz emission and detection performances are experimentally demonstrated by using InAlAs/InGaAs/InP and/or InGaP/InGaAs/GaAs heterostructure material systems. Their applications to nondestructive material evaluation based on terahertz imaging are also presented.
Original language | English |
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Article number | 87250F |
Journal | Proceedings of SPIE - The International Society for Optical Engineering |
Volume | 8725 |
DOIs | |
Publication status | Published - 2013 |
Event | 2013 Micro- and Nanotechnology Sensors, Systems, and Applications V Conference - Baltimore, MD, United States Duration: 2013 Apr 29 → 2013 May 3 |
Keywords
- Detection
- Emission
- Nondestructive
- Plasmons
- Terahertz
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering