TY - GEN
T1 - Embedded nonvolatile memory with STT-MRAMs and its application for nonvolatile brain-inspired VLSIs
AU - Endoh, Tetsuo
PY - 2017/6/7
Y1 - 2017/6/7
N2 - Recently in semiconductor memories such as embedded memories (SRAM, e-DRAM), main memories (DRAM) and storage memories (NAND memory), it is becoming difficult to meet the target performance only by scaling technologies. Especially for high speed embedded memories, the large power consumption brings more serious issues due to rapid increase in memory capacity under multi core MPUs, operation speed and leakage current of scaled CMOS. Moreover, the speed gap between each memory levels in addition to that between the operation speed of MPUs and that of embedded memories and main memories have expanded year by year.
AB - Recently in semiconductor memories such as embedded memories (SRAM, e-DRAM), main memories (DRAM) and storage memories (NAND memory), it is becoming difficult to meet the target performance only by scaling technologies. Especially for high speed embedded memories, the large power consumption brings more serious issues due to rapid increase in memory capacity under multi core MPUs, operation speed and leakage current of scaled CMOS. Moreover, the speed gap between each memory levels in addition to that between the operation speed of MPUs and that of embedded memories and main memories have expanded year by year.
UR - http://www.scopus.com/inward/record.url?scp=85023170703&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85023170703&partnerID=8YFLogxK
U2 - 10.1109/VLSI-TSA.2017.7942446
DO - 10.1109/VLSI-TSA.2017.7942446
M3 - Conference contribution
AN - SCOPUS:85023170703
T3 - 2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017
BT - 2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017
Y2 - 24 April 2017 through 27 April 2017
ER -