Embedded nonvolatile memory with STT-MRAMs and its application for nonvolatile brain-inspired VLSIs

Tetsuo Endoh

doi:10.1109/VLSI-TSA.2017.7942446

Embedded nonvolatile memory with STT-MRAMs and its application for nonvolatile brain-inspired VLSIs

Tetsuo Endoh

ENG - Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

Recently in semiconductor memories such as embedded memories (SRAM, e-DRAM), main memories (DRAM) and storage memories (NAND memory), it is becoming difficult to meet the target performance only by scaling technologies. Especially for high speed embedded memories, the large power consumption brings more serious issues due to rapid increase in memory capacity under multi core MPUs, operation speed and leakage current of scaled CMOS. Moreover, the speed gap between each memory levels in addition to that between the operation speed of MPUs and that of embedded memories and main memories have expanded year by year.

Original language	English
Title of host publication	2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781509058051
DOIs	https://doi.org/10.1109/VLSI-TSA.2017.7942446
Publication status	Published - 2017 Jun 7
Event	2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017 - Hsinchu, Taiwan, Province of China Duration: 2017 Apr 24 → 2017 Apr 27

Publication series

Name	2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017

Other

Other	2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017
Country	Taiwan, Province of China
City	Hsinchu
Period	17/4/24 → 17/4/27

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering

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10.1109/VLSI-TSA.2017.7942446

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Endoh, T. (2017). Embedded nonvolatile memory with STT-MRAMs and its application for nonvolatile brain-inspired VLSIs. In 2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017 [7942446] (2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSI-TSA.2017.7942446

Embedded nonvolatile memory with STT-MRAMs and its application for nonvolatile brain-inspired VLSIs. / Endoh, Tetsuo.

2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017. Institute of Electrical and Electronics Engineers Inc., 2017. 7942446 (2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Endoh, T 2017, Embedded nonvolatile memory with STT-MRAMs and its application for nonvolatile brain-inspired VLSIs. in 2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017., 7942446, 2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017, Institute of Electrical and Electronics Engineers Inc., 2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017, Hsinchu, Taiwan, Province of China, 17/4/24. https://doi.org/10.1109/VLSI-TSA.2017.7942446

Endoh T. Embedded nonvolatile memory with STT-MRAMs and its application for nonvolatile brain-inspired VLSIs. In 2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017. Institute of Electrical and Electronics Engineers Inc. 2017. 7942446. (2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017). https://doi.org/10.1109/VLSI-TSA.2017.7942446

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abstract = "Recently in semiconductor memories such as embedded memories (SRAM, e-DRAM), main memories (DRAM) and storage memories (NAND memory), it is becoming difficult to meet the target performance only by scaling technologies. Especially for high speed embedded memories, the large power consumption brings more serious issues due to rapid increase in memory capacity under multi core MPUs, operation speed and leakage current of scaled CMOS. Moreover, the speed gap between each memory levels in addition to that between the operation speed of MPUs and that of embedded memories and main memories have expanded year by year.",

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Embedded nonvolatile memory with STT-MRAMs and its application for nonvolatile brain-inspired VLSIs

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