Elimination of Voids at Interface of β-SiC Films and Si Substrate by Laser CVD

Peipei Zhu, Qingfang Xu, Han Guo, Rong Tu, Song Zhang, Meijun Yang, Lianmeng Zhang, Takashi Goto, Jiasheng Yan, Shusen Li

Research output: Contribution to journalArticlepeer-review

Abstract

Void-free β-SiC films were deposited on Si(001) substrates by laser chemical vapor deposition using hexamethyldisilane (HMDS) as the precursor. The effect of the time of introducing HMDS, i e, the substrate temperature when HMDS introduced (Tin), on the preferred orientation, surface microstructure and void was investigated. The orientation of the deposited SiC films changed from <001> to random to <111> with increasing Tin. The surface showed a layer-by-layer microstructure with voids above Tin ⩾ 773 K, and then transformed into mosaic structure without voids at Tin= 298 K. The mechanism of the elimination of voids was discussed. At Tin =298 K, Si surface can be covered by an ultrathin SiC film, which inhibits the out-diffusion of Si atoms from substrate and prohibites the formation of the voids.

Original languageEnglish
Pages (from-to)356-362
Number of pages7
JournalJournal Wuhan University of Technology, Materials Science Edition
Volume33
Issue number2
DOIs
Publication statusPublished - 2018 Apr 1

Keywords

  • HMDS
  • laser CVD
  • voids
  • β-SiC

ASJC Scopus subject areas

  • Materials Science(all)

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